Quasi-2D compact modeling for double-gate MOSFET

Mansun Chan; Tze Yin Man; Jin He; Xuemei Xi; Chung Hsun Lin; Xinnan Lin; Ping K. Ko; Ali M. Niknejad; Chenming Hu

Quasi-2D compact modeling for double-gate MOSFET

Mansun Chan^*
, Tze Yin Man
, Jin He
, Xuemei Xi
, Chung Hsun Lin
, Xinnan Lin
, Ping K. Ko
, Ali M. Niknejad
, Chenming Hu

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

10 Citations (Scopus)

Abstract

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the silicon film thickness and cannot be ignored. Together with volume inversion and quantum effect, the carriers are distributed along the vertical direction perpendicular to the direction of current flow. Therefore, a 2D modeling approach considering vertical current distribution and lateral carrier transport is required. To simplify the 2-D problem, the quasi-Fermi potential has been taken as a reference to develop a quasi 2-D DG MOSFET model.

Original language	English
Title of host publication	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Publisher	Nano Science and Technology Institute
Pages	108-113
Number of pages	6
ISBN (Print)	0972842276, 9780972842273
Publication status	Published - 2004
Event	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: 7 Mar 2004 → 11 Mar 2004

Publication series

Name	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume	2

Conference

Conference	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Country/Territory	United States
City	Boston, MA
Period	7/03/04 → 11/03/04

Keywords

BSIM
CMOS Device
Circuit Simulation
Device model
Double-gate MOSFET
SPICE

Cite this

@inproceedings{3adf907452604747917502b65a97c597,

title = "Quasi-2D compact modeling for double-gate MOSFET",

abstract = "This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the silicon film thickness and cannot be ignored. Together with volume inversion and quantum effect, the carriers are distributed along the vertical direction perpendicular to the direction of current flow. Therefore, a 2D modeling approach considering vertical current distribution and lateral carrier transport is required. To simplify the 2-D problem, the quasi-Fermi potential has been taken as a reference to develop a quasi 2-D DG MOSFET model.",

keywords = "BSIM, CMOS Device, Circuit Simulation, Device model, Double-gate MOSFET, SPICE",

author = "Mansun Chan and Man, \{Tze Yin\} and Jin He and Xuemei Xi and Lin, \{Chung Hsun\} and Xinnan Lin and Ko, \{Ping K.\} and Niknejad, \{Ali M.\} and Chenming Hu",

year = "2004",

language = "English",

isbn = "0972842276",

series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

publisher = "Nano Science and Technology Institute",

pages = "108--113",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 ; Conference date: 07-03-2004 Through 11-03-2004",

}

Chan, M, Man, TY, He, J, Xi, X, Lin, CH, Lin, X, Ko, PK, Niknejad, AM & Hu, C 2004, Quasi-2D compact modeling for double-gate MOSFET. in 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, vol. 2, Nano Science and Technology Institute, pp. 108-113, 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Boston, MA, United States, 7/03/04.

Quasi-2D compact modeling for double-gate MOSFET. / Chan, Mansun; Man, Tze Yin; He, Jin et al.
2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. Nano Science and Technology Institute, 2004. p. 108-113 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Quasi-2D compact modeling for double-gate MOSFET

AU - Chan, Mansun

AU - Man, Tze Yin

AU - He, Jin

AU - Xi, Xuemei

AU - Lin, Chung Hsun

AU - Lin, Xinnan

AU - Ko, Ping K.

AU - Niknejad, Ali M.

AU - Hu, Chenming

PY - 2004

Y1 - 2004

N2 - This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the silicon film thickness and cannot be ignored. Together with volume inversion and quantum effect, the carriers are distributed along the vertical direction perpendicular to the direction of current flow. Therefore, a 2D modeling approach considering vertical current distribution and lateral carrier transport is required. To simplify the 2-D problem, the quasi-Fermi potential has been taken as a reference to develop a quasi 2-D DG MOSFET model.

AB - This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the silicon film thickness and cannot be ignored. Together with volume inversion and quantum effect, the carriers are distributed along the vertical direction perpendicular to the direction of current flow. Therefore, a 2D modeling approach considering vertical current distribution and lateral carrier transport is required. To simplify the 2-D problem, the quasi-Fermi potential has been taken as a reference to develop a quasi 2-D DG MOSFET model.

KW - BSIM

KW - CMOS Device

KW - Circuit Simulation

KW - Device model

KW - Double-gate MOSFET

KW - SPICE

UR - https://www.scopus.com/pages/publications/6344280362

M3 - Conference Paper published in a book

AN - SCOPUS:6344280362

SN - 0972842276

SN - 9780972842273

T3 - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

SP - 108

EP - 113

BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

PB - Nano Science and Technology Institute

T2 - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Y2 - 7 March 2004 through 11 March 2004

ER -

Quasi-2D compact modeling for double-gate MOSFET

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Keywords

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