TY - JOUR
T1 - Quintuple-layer epitaxy of thin films of topological insulator Bi 2 Se3
AU - Zhang, Guanhua
AU - Qin, Huajun
AU - Teng, Jing
AU - Guo, Jiandong
AU - Guo, Qinlin
AU - Dai, Xi
AU - Fang, Zhong
AU - Wu, Kehui
PY - 2009
Y1 - 2009
N2 - Atomically smooth, single crystalline Bi2 Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (∼1 nm).
AB - Atomically smooth, single crystalline Bi2 Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (∼1 nm).
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000268809400078
UR - https://openalex.org/W2114898354
UR - https://www.scopus.com/pages/publications/68349131519
U2 - 10.1063/1.3200237
DO - 10.1063/1.3200237
M3 - Journal Article
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 5
M1 - 053114
ER -