Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots

X. Li; C. W. Leung; K. W. Lin; M. S. Chan; P. W.T. Pong

doi:10.1109/ISNE.2016.7543295

Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots

X. Li, C. W. Leung, K. W. Lin, M. S. Chan, P. W.T. Pong

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

The coercivity (H_c) and switching field (H_sw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced H_c and H_sw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of H_c and H_sw on amplification factor. H_c and H_sw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the H_c and H_sw in nanomagnets.

Original language	English
Title of host publication	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509024391
DOIs	https://doi.org/10.1109/ISNE.2016.7543295
Publication status	Published - 12 Aug 2016
Event	5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan, Province of China Duration: 4 May 2016 → 6 May 2016

Publication series

Name	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Conference

Conference	5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	4/05/16 → 6/05/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

nanodots
nanosphere lithography
synthetic-ferrimagnetic

Access to Document

10.1109/ISNE.2016.7543295

Cite this

Li, X., Leung, C. W., Lin, K. W., Chan, M. S., & Pong, P. W. T. (2016). Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 Article 7543295 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2016.7543295

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title = "Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots",

abstract = "The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.",

keywords = "nanodots, nanosphere lithography, synthetic-ferrimagnetic",

author = "X. Li and Leung, \{C. W.\} and Lin, \{K. W.\} and Chan, \{M. S.\} and Pong, \{P. W.T.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 5th International Symposium on Next-Generation Electronics, ISNE 2016 ; Conference date: 04-05-2016 Through 06-05-2016",

year = "2016",

month = aug,

day = "12",

doi = "10.1109/ISNE.2016.7543295",

language = "English",

series = "2016 5th International Symposium on Next-Generation Electronics, ISNE 2016",

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Li, X, Leung, CW, Lin, KW, Chan, MS & Pong, PWT 2016, Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots. in 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016., 7543295, 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016, Institute of Electrical and Electronics Engineers Inc., 5th International Symposium on Next-Generation Electronics, ISNE 2016, Hsinchu, Taiwan, Province of China, 4/05/16. https://doi.org/10.1109/ISNE.2016.7543295

Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots. / Li, X.; Leung, C. W.; Lin, K. W. et al.
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7543295 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots

AU - Li, X.

AU - Leung, C. W.

AU - Lin, K. W.

AU - Chan, M. S.

AU - Pong, P. W.T.

PY - 2016/8/12

Y1 - 2016/8/12

N2 - The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.

AB - The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.

KW - nanodots

KW - nanosphere lithography

KW - synthetic-ferrimagnetic

UR - https://openalex.org/W2510026038

UR - https://www.scopus.com/pages/publications/84986005698

U2 - 10.1109/ISNE.2016.7543295

DO - 10.1109/ISNE.2016.7543295

M3 - Conference Paper published in a book

T3 - 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

BT - 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th International Symposium on Next-Generation Electronics, ISNE 2016

Y2 - 4 May 2016 through 6 May 2016

ER -

Li X, Leung CW, Lin KW, Chan MS, Pong PWT. Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7543295. (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). doi: 10.1109/ISNE.2016.7543295

Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots

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