Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD

Shengdong Zhang; Ruqi Han; Johnny K.O. Sin; Mansun Chan

doi:10.1109/TED.2002.801232

Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD

Shengdong Zhang^*, Ruqi Han, Johnny K.O. Sin, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

12 Citations (Scopus)

Abstract

In this brief, the lateral electric field distribution in the channel of a double-gate TFT is studied and compared with that of a conventional single-gate TFT. The double-gate TFT is predicted to suffer from a more severe anomalous off-current than the single-gate TFT. A smart double-gate TFT technology is proposed to decrease the off-current. The unique feature of the technology is the lithography independent formation of the self-aligned double-gate and the symmetric lightly doped drain (LDD) structures. With the LDD applied, the anomalous off-current of the fabricated double-gate TFT is reduced by three orders of magnitude from the range of 10^-9 A/μm to 10^-12 A/μm. The on/off current ratio is increased by three orders of magnitude accordingly from around 10⁴ to 10⁷.

Original language	English
Pages (from-to)	1490-1492
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	8
DOIs	https://doi.org/10.1109/TED.2002.801232
Publication status	Published - Aug 2002

Keywords

Double-gate
Lightly doped drain (LDD)
Self-aligned
Thin-film transistor (TFT)

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10.1109/TED.2002.801232

Cite this

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title = "Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD",

abstract = "In this brief, the lateral electric field distribution in the channel of a double-gate TFT is studied and compared with that of a conventional single-gate TFT. The double-gate TFT is predicted to suffer from a more severe anomalous off-current than the single-gate TFT. A smart double-gate TFT technology is proposed to decrease the off-current. The unique feature of the technology is the lithography independent formation of the self-aligned double-gate and the symmetric lightly doped drain (LDD) structures. With the LDD applied, the anomalous off-current of the fabricated double-gate TFT is reduced by three orders of magnitude from the range of 10-9 A/μm to 10-12 A/μm. The on/off current ratio is increased by three orders of magnitude accordingly from around 104 to 107.",

keywords = "Double-gate, Lightly doped drain (LDD), Self-aligned, Thin-film transistor (TFT)",

author = "Shengdong Zhang and Ruqi Han and Sin, \{Johnny K.O.\} and Mansun Chan",

year = "2002",

month = aug,

doi = "10.1109/TED.2002.801232",

language = "English",

volume = "49",

pages = "1490--1492",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD

AU - Zhang, Shengdong

AU - Han, Ruqi

AU - Sin, Johnny K.O.

AU - Chan, Mansun

PY - 2002/8

Y1 - 2002/8

N2 - In this brief, the lateral electric field distribution in the channel of a double-gate TFT is studied and compared with that of a conventional single-gate TFT. The double-gate TFT is predicted to suffer from a more severe anomalous off-current than the single-gate TFT. A smart double-gate TFT technology is proposed to decrease the off-current. The unique feature of the technology is the lithography independent formation of the self-aligned double-gate and the symmetric lightly doped drain (LDD) structures. With the LDD applied, the anomalous off-current of the fabricated double-gate TFT is reduced by three orders of magnitude from the range of 10-9 A/μm to 10-12 A/μm. The on/off current ratio is increased by three orders of magnitude accordingly from around 104 to 107.

AB - In this brief, the lateral electric field distribution in the channel of a double-gate TFT is studied and compared with that of a conventional single-gate TFT. The double-gate TFT is predicted to suffer from a more severe anomalous off-current than the single-gate TFT. A smart double-gate TFT technology is proposed to decrease the off-current. The unique feature of the technology is the lithography independent formation of the self-aligned double-gate and the symmetric lightly doped drain (LDD) structures. With the LDD applied, the anomalous off-current of the fabricated double-gate TFT is reduced by three orders of magnitude from the range of 10-9 A/μm to 10-12 A/μm. The on/off current ratio is increased by three orders of magnitude accordingly from around 104 to 107.

KW - Double-gate

KW - Lightly doped drain (LDD)

KW - Self-aligned

KW - Thin-film transistor (TFT)

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000177114700024

UR - https://openalex.org/W2138322997

UR - https://www.scopus.com/pages/publications/0036683901

U2 - 10.1109/TED.2002.801232

DO - 10.1109/TED.2002.801232

M3 - Journal Article

SN - 0018-9383

VL - 49

SP - 1490

EP - 1492

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD

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Keywords

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