Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer

Teng Fan; Ning Tang; Jiaqi Wei; Shixiong Zhang; Zhenhao Sun; Guoping Li; Jiayang Jiang; Lei Fu; Yunfan Zhang; Ye Yuan; Xin Rong; Weikun Ge; Xinqiang Wang; Bo Shen

doi:10.1016/j.micrna.2023.207525

Reduction of vacancy defects induced by thermal annealing in β-Ga₂O₃ epilayer

Teng Fan, Ning Tang^*, Jiaqi Wei, Shixiong Zhang, Zhenhao Sun, Guoping Li, Jiayang Jiang, Lei Fu, Yunfan Zhang, Ye Yuan, Xin Rong^*, Weikun Ge, Xinqiang Wang, Bo Shen^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

13 Citations (Scopus)

Abstract

The effects of annealing in oxygen atmosphere of β-Ga₂O₃ epilayers were investigated by X-ray photoelectron spectroscopy, photoluminescence and Fourier-transform infrared spectroscopy. The increasing proportions of Ga³⁺ and O_L (lattice oxygen) signifies the reduction of V_O as the annealing temperature rising. The variations of the photoluminescence emissions demonstrate the improvement of the crystal quality and reduction of V_O(1), V_O(2) and V_Ga. V_O and V_Ga are filled with oxygen atoms and gallium atoms after annealing, mainly attributed to the bonds constructions of Ga (1)–O (1) and Ga (1)–O (2) in GaO₄ tetrahedra. These results offer detailed information and guidelines for removing intrinsic point defects in β-Ga₂O₃.

Original language	English
Article number	207525
Journal	Micro and Nanostructures
Volume	176
DOIs	https://doi.org/10.1016/j.micrna.2023.207525
Publication status	Published - Apr 2023
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2023 Elsevier Ltd

Keywords

GaO tetrahedra
Thermal annealing
Vacancy defects
β-GaO

Access to Document

10.1016/j.micrna.2023.207525

Cite this

@article{eeee4988a7854ba7949e7ce18b765f9b,

title = "Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer",

abstract = "The effects of annealing in oxygen atmosphere of β-Ga2O3 epilayers were investigated by X-ray photoelectron spectroscopy, photoluminescence and Fourier-transform infrared spectroscopy. The increasing proportions of Ga3+ and OL (lattice oxygen) signifies the reduction of VO as the annealing temperature rising. The variations of the photoluminescence emissions demonstrate the improvement of the crystal quality and reduction of VO(1), VO(2) and VGa. VO and VGa are filled with oxygen atoms and gallium atoms after annealing, mainly attributed to the bonds constructions of Ga (1)–O (1) and Ga (1)–O (2) in GaO4 tetrahedra. These results offer detailed information and guidelines for removing intrinsic point defects in β-Ga2O3.",

keywords = "GaO tetrahedra, Thermal annealing, Vacancy defects, β-GaO",

author = "Teng Fan and Ning Tang and Jiaqi Wei and Shixiong Zhang and Zhenhao Sun and Guoping Li and Jiayang Jiang and Lei Fu and Yunfan Zhang and Ye Yuan and Xin Rong and Weikun Ge and Xinqiang Wang and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = apr,

doi = "10.1016/j.micrna.2023.207525",

language = "English",

volume = "176",

journal = "Micro and Nanostructures",

issn = "2773-0123",

}

TY - JOUR

T1 - Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer

AU - Fan, Teng

AU - Tang, Ning

AU - Wei, Jiaqi

AU - Zhang, Shixiong

AU - Sun, Zhenhao

AU - Li, Guoping

AU - Jiang, Jiayang

AU - Fu, Lei

AU - Zhang, Yunfan

AU - Yuan, Ye

AU - Rong, Xin

AU - Ge, Weikun

AU - Wang, Xinqiang

AU - Shen, Bo

PY - 2023/4

Y1 - 2023/4

N2 - The effects of annealing in oxygen atmosphere of β-Ga2O3 epilayers were investigated by X-ray photoelectron spectroscopy, photoluminescence and Fourier-transform infrared spectroscopy. The increasing proportions of Ga3+ and OL (lattice oxygen) signifies the reduction of VO as the annealing temperature rising. The variations of the photoluminescence emissions demonstrate the improvement of the crystal quality and reduction of VO(1), VO(2) and VGa. VO and VGa are filled with oxygen atoms and gallium atoms after annealing, mainly attributed to the bonds constructions of Ga (1)–O (1) and Ga (1)–O (2) in GaO4 tetrahedra. These results offer detailed information and guidelines for removing intrinsic point defects in β-Ga2O3.

AB - The effects of annealing in oxygen atmosphere of β-Ga2O3 epilayers were investigated by X-ray photoelectron spectroscopy, photoluminescence and Fourier-transform infrared spectroscopy. The increasing proportions of Ga3+ and OL (lattice oxygen) signifies the reduction of VO as the annealing temperature rising. The variations of the photoluminescence emissions demonstrate the improvement of the crystal quality and reduction of VO(1), VO(2) and VGa. VO and VGa are filled with oxygen atoms and gallium atoms after annealing, mainly attributed to the bonds constructions of Ga (1)–O (1) and Ga (1)–O (2) in GaO4 tetrahedra. These results offer detailed information and guidelines for removing intrinsic point defects in β-Ga2O3.

KW - GaO tetrahedra

KW - Thermal annealing

KW - Vacancy defects

KW - β-GaO

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000993679800001

UR - https://www.scopus.com/pages/publications/85147542765

U2 - 10.1016/j.micrna.2023.207525

DO - 10.1016/j.micrna.2023.207525

M3 - Journal Article

AN - SCOPUS:85147542765

SN - 2773-0123

VL - 176

JO - Micro and Nanostructures

JF - Micro and Nanostructures

M1 - 207525

ER -