TY - JOUR
T1 - Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress
AU - Zhu, Guanming
AU - Chen, Zhiying
AU - Zhang, Meng
AU - Lu, Lei
AU - Deng, Sunbin
AU - Wong, Man
AU - Kwok, Hoi Sing
N1 - Publisher Copyright:
© 2024 Author(s).
PY - 2024/7/8
Y1 - 2024/7/8
N2 - In this Letter, the reliability of indium-tin-zinc-oxide thin-film transistors (TFTs) under dynamic drain voltage stress is investigated. A degradation phenomenon, associated with both pulse rising time (tr) and falling time, is observed. Through the technology computer-aided design simulation and recovery experiment, it is discovered that the tr-dependent dynamic hot carrier effect and integral voltage-dependent electron detrapping jointly affect the device's reliability. Finally, an AC degradation model in indium-tin-zinc oxide TFTs, considering the non-equilibrium junction, hot carrier injection, and recovery, was proposed.
AB - In this Letter, the reliability of indium-tin-zinc-oxide thin-film transistors (TFTs) under dynamic drain voltage stress is investigated. A degradation phenomenon, associated with both pulse rising time (tr) and falling time, is observed. Through the technology computer-aided design simulation and recovery experiment, it is discovered that the tr-dependent dynamic hot carrier effect and integral voltage-dependent electron detrapping jointly affect the device's reliability. Finally, an AC degradation model in indium-tin-zinc oxide TFTs, considering the non-equilibrium junction, hot carrier injection, and recovery, was proposed.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001267302200006
UR - https://openalex.org/W4400550435
UR - https://www.scopus.com/pages/publications/85198625394
U2 - 10.1063/5.0213509
DO - 10.1063/5.0213509
M3 - Journal Article
SN - 0003-6951
VL - 125
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 2
M1 - 023505
ER -