Reply to “Comments on ‘Impact Ionization in GaAs MESFET'”

Research output: Contribution to journal › Journal Article › peer-review

Original language	English
Pages (from-to)	81-82
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/55.75711
Publication status	Published - Feb 1991
Externally published	Yes

Access to Document

@article{586fd43074f14833b9328127192d9cad,

title = "Reply to “Comments on {\textquoteleft}Impact Ionization in GaAs MESFET'”",

author = "K. Hui and C. Hu and P. George and Ko, \{P. K.\}",

year = "1991",

month = feb,

doi = "10.1109/55.75711",

language = "English",

volume = "12",

pages = "81--82",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Reply to “Comments on ‘Impact Ionization in GaAs MESFET'”

AU - Hui, K.

AU - Hu, C.

AU - George, P.

AU - Ko, P. K.

PY - 1991/2

Y1 - 1991/2

UR - https://openalex.org/W1965637532

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1991EU68900018

UR - https://www.scopus.com/pages/publications/84941516536

U2 - 10.1109/55.75711

DO - 10.1109/55.75711

M3 - Journal Article

AN - SCOPUS:84941516536

SN - 0741-3106

VL - 12

SP - 81

EP - 82

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -