Research progress on core-shell nanowire FETs

Jin He; Lining Zhang; Xiangyu Zhang; Wen Wu; Wenping Wang; Miaomiao Ma; Yun Ye; Mansun Chan

doi:10.1109/ICSICT.2014.7021497

Research progress on core-shell nanowire FETs

Jin He, Lining Zhang, Xiangyu Zhang, Wen Wu, Wenping Wang, Miaomiao Ma, Yun Ye, Mansun Chan

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Silicon-based nanowire CMOS with the core-shell structure has not only excellent short-channel effect and enhanced conductance capability due to reduced scattering effect and unique low-dimensional structure, but also is compatible with the traditional CMOS processing, thus, it may be the promise one among the bulk MOSFET alternatives to extend CMOS integrated circuit into 10nm generation beyond. The work in the ULTRA group explored the novel structure, transport mechanism, simulation tool and compact modeling, strain effect, energy band engineering, so to develop the core-shell nanowire device physics theory, provide the new simulation tool, build an efficient compact model, and establish new fine process integration technique. The work deliverables will help device scientists and circuit designers deeply understand the potential and function of the silicon-based core-shell nanowire FET application beyond 10nm CMOS integrated circuit, know how to realize the optimized circuit performance from the fine processing technology and design.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021497
Publication status	Published - 23 Jan 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

Nanowire
compact modeling
core-shell structure
device physics
new structure
simulation tool

Access to Document

10.1109/ICSICT.2014.7021497

Cite this

He, J., Zhang, L., Zhang, X., Wu, W., Wang, W., Ma, M., Ye, Y., & Chan, M. (2014). Research progress on core-shell nanowire FETs. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021497 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021497

He, Jin ; Zhang, Lining ; Zhang, Xiangyu et al. / Research progress on core-shell nanowire FETs. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

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title = "Research progress on core-shell nanowire FETs",

abstract = "Silicon-based nanowire CMOS with the core-shell structure has not only excellent short-channel effect and enhanced conductance capability due to reduced scattering effect and unique low-dimensional structure, but also is compatible with the traditional CMOS processing, thus, it may be the promise one among the bulk MOSFET alternatives to extend CMOS integrated circuit into 10nm generation beyond. The work in the ULTRA group explored the novel structure, transport mechanism, simulation tool and compact modeling, strain effect, energy band engineering, so to develop the core-shell nanowire device physics theory, provide the new simulation tool, build an efficient compact model, and establish new fine process integration technique. The work deliverables will help device scientists and circuit designers deeply understand the potential and function of the silicon-based core-shell nanowire FET application beyond 10nm CMOS integrated circuit, know how to realize the optimized circuit performance from the fine processing technology and design.",

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author = "Jin He and Lining Zhang and Xiangyu Zhang and Wen Wu and Wenping Wang and Miaomiao Ma and Yun Ye and Mansun Chan",

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doi = "10.1109/ICSICT.2014.7021497",

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He, J, Zhang, L, Zhang, X, Wu, W, Wang, W, Ma, M, Ye, Y & Chan, M 2014, Research progress on core-shell nanowire FETs. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021497, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021497

Research progress on core-shell nanowire FETs. / He, Jin; Zhang, Lining; Zhang, Xiangyu et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021497 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

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AU - He, Jin

AU - Zhang, Lining

AU - Zhang, Xiangyu

AU - Wu, Wen

AU - Wang, Wenping

AU - Ma, Miaomiao

AU - Ye, Yun

AU - Chan, Mansun

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Silicon-based nanowire CMOS with the core-shell structure has not only excellent short-channel effect and enhanced conductance capability due to reduced scattering effect and unique low-dimensional structure, but also is compatible with the traditional CMOS processing, thus, it may be the promise one among the bulk MOSFET alternatives to extend CMOS integrated circuit into 10nm generation beyond. The work in the ULTRA group explored the novel structure, transport mechanism, simulation tool and compact modeling, strain effect, energy band engineering, so to develop the core-shell nanowire device physics theory, provide the new simulation tool, build an efficient compact model, and establish new fine process integration technique. The work deliverables will help device scientists and circuit designers deeply understand the potential and function of the silicon-based core-shell nanowire FET application beyond 10nm CMOS integrated circuit, know how to realize the optimized circuit performance from the fine processing technology and design.

AB - Silicon-based nanowire CMOS with the core-shell structure has not only excellent short-channel effect and enhanced conductance capability due to reduced scattering effect and unique low-dimensional structure, but also is compatible with the traditional CMOS processing, thus, it may be the promise one among the bulk MOSFET alternatives to extend CMOS integrated circuit into 10nm generation beyond. The work in the ULTRA group explored the novel structure, transport mechanism, simulation tool and compact modeling, strain effect, energy band engineering, so to develop the core-shell nanowire device physics theory, provide the new simulation tool, build an efficient compact model, and establish new fine process integration technique. The work deliverables will help device scientists and circuit designers deeply understand the potential and function of the silicon-based core-shell nanowire FET application beyond 10nm CMOS integrated circuit, know how to realize the optimized circuit performance from the fine processing technology and design.

KW - Nanowire

KW - compact modeling

KW - core-shell structure

KW - device physics

KW - new structure

KW - simulation tool

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T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

He J, Zhang L, Zhang X, Wu W, Wang W, Ma M et al. Research progress on core-shell nanowire FETs. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021497. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021497

Research progress on core-shell nanowire FETs

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