Resistivity minima and Kondo effect in ferromagnetic GaMnAs films

H. T. He, C. L. Yang, W. K. Ge, J. N. Wang*, X. Dai, Y. Q. Wang

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

49 Citations (Scopus)

Abstract

The temperature dependence of the resistivity of ferromagnetic GaMnAs, as-grown or low-temperature-annealed samples is measured from 2 to 290 K. A resistivity minimum is observed with a corresponding temperature TM around 10 K for each sample. Below TM, the resistivity exhibits logarithmic temperature dependence, as α ln (T), and α is independent of the external magnetic field up to 9 T. Such behavior is explained in terms of the Kondo effect arising from the presence of Mn interstitials in the GaMnAs samples. In addition, a well-defined T -squared dependence of resistivity is found in the temperature range between TM and the Curie temperature (TC), which is attributed to single magnon scattering.

Original languageEnglish
Article number162506
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number16
DOIs
Publication statusPublished - 17 Oct 2005

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