Reverse channel floating base emitter switched thyristor (RFB-EST)

Shuming Xu; Rainer Constapel; Dieter Silber; Johnny K.O. Sin

doi:10.1109/IEDM.1997.650398

Reverse channel floating base emitter switched thyristor (RFB-EST)

Shuming Xu^*
, Rainer Constapel
, Dieter Silber
, Johnny K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Conference article published in journal › peer-review

5 Citations (Scopus)

Abstract

This paper presents a novel EST (Emitter Switched Thyristor) called Reverse Channel Floating Base EST (RFB-EST). This structure is a combination of a Reverse Channel IGBT (RC-IGBT) and a thyristor-NMOS configuration. The thyristor has a floating p-base connected with the cathode electrode by a self controlled PMOSFET which functions as an active diverter. This enables the device to have a low on-state voltage drop and big safe operating area. Due to the RC-IGBT configuration, the parasitic thyristor latch-up immunity is improved drastically, and as a result the maximum controllable current density is 3 times enlarged even at 200 °C as compared to that of the LIGBT. Besides the other merits of the RFB-EST, a solution to solve the problem induced by the undesired parasitic thyristor latch-up of LIGBTs and LESTs is achieved.

Original language	English
Pages (from-to)	355-358
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1997.650398
Publication status	Published - 1 Jan 1997
Event	Proceedings of the 1997 International Electron Devices Meeting - Washington, DC, USA Duration: 7 Dec 1997 → 10 Dec 1997

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10.1109/IEDM.1997.650398

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title = "Reverse channel floating base emitter switched thyristor (RFB-EST)",

abstract = "This paper presents a novel EST (Emitter Switched Thyristor) called Reverse Channel Floating Base EST (RFB-EST). This structure is a combination of a Reverse Channel IGBT (RC-IGBT) and a thyristor-NMOS configuration. The thyristor has a floating p-base connected with the cathode electrode by a self controlled PMOSFET which functions as an active diverter. This enables the device to have a low on-state voltage drop and big safe operating area. Due to the RC-IGBT configuration, the parasitic thyristor latch-up immunity is improved drastically, and as a result the maximum controllable current density is 3 times enlarged even at 200 °C as compared to that of the LIGBT. Besides the other merits of the RFB-EST, a solution to solve the problem induced by the undesired parasitic thyristor latch-up of LIGBTs and LESTs is achieved.",

author = "Shuming Xu and Rainer Constapel and Dieter Silber and Sin, \{Johnny K.O.\}",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/IEDM.1997.650398",

language = "English",

pages = "355--358",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 International Electron Devices Meeting ; Conference date: 07-12-1997 Through 10-12-1997",

}

TY - JOUR

T1 - Reverse channel floating base emitter switched thyristor (RFB-EST)

AU - Xu, Shuming

AU - Constapel, Rainer

AU - Silber, Dieter

AU - Sin, Johnny K.O.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - This paper presents a novel EST (Emitter Switched Thyristor) called Reverse Channel Floating Base EST (RFB-EST). This structure is a combination of a Reverse Channel IGBT (RC-IGBT) and a thyristor-NMOS configuration. The thyristor has a floating p-base connected with the cathode electrode by a self controlled PMOSFET which functions as an active diverter. This enables the device to have a low on-state voltage drop and big safe operating area. Due to the RC-IGBT configuration, the parasitic thyristor latch-up immunity is improved drastically, and as a result the maximum controllable current density is 3 times enlarged even at 200 °C as compared to that of the LIGBT. Besides the other merits of the RFB-EST, a solution to solve the problem induced by the undesired parasitic thyristor latch-up of LIGBTs and LESTs is achieved.

AB - This paper presents a novel EST (Emitter Switched Thyristor) called Reverse Channel Floating Base EST (RFB-EST). This structure is a combination of a Reverse Channel IGBT (RC-IGBT) and a thyristor-NMOS configuration. The thyristor has a floating p-base connected with the cathode electrode by a self controlled PMOSFET which functions as an active diverter. This enables the device to have a low on-state voltage drop and big safe operating area. Due to the RC-IGBT configuration, the parasitic thyristor latch-up immunity is improved drastically, and as a result the maximum controllable current density is 3 times enlarged even at 200 °C as compared to that of the LIGBT. Besides the other merits of the RFB-EST, a solution to solve the problem induced by the undesired parasitic thyristor latch-up of LIGBTs and LESTs is achieved.

UR - https://www.scopus.com/pages/publications/84886448084

U2 - 10.1109/IEDM.1997.650398

DO - 10.1109/IEDM.1997.650398

M3 - Conference article published in journal

AN - SCOPUS:84886448084

SN - 0163-1918

SP - 355

EP - 358

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -

Reverse channel floating base emitter switched thyristor (RFB-EST)

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