TY - JOUR
T1 - Reversely-Synchronized-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure
AU - Zhang, Meng
AU - Deng, Sunbin
AU - Zhou, Wei
AU - Yan, Yan
AU - Wong, Man
AU - Kwok, Hoi Sing
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - In this letter, a reversely synchronized stress (RSS) is proposed to simulate the working condition of switching thin-film transistors (TFTs) in active-matrix displays. The reliability of polycrystalline silicon (poly-Si) TFTs under RSS is characterized and investigated. RSS brings huge device degradation. A dynamic hot carrier (HC) effect, dependent on transition edges of RSS, dominates the degradation. Combined with a transient simulation, the degradation mechanism under RSS in poly-Si TFTs is discussed and developed. To suppress RSS-induced HC degradation, a bridged-grain (BG) structure is employed in the active layer of poly-Si TFTs. Via BG lines' reducing the lateral electric field in the channel at source/drain sides, the reliability of BG TFTs under RSS is significantly improved.
AB - In this letter, a reversely synchronized stress (RSS) is proposed to simulate the working condition of switching thin-film transistors (TFTs) in active-matrix displays. The reliability of polycrystalline silicon (poly-Si) TFTs under RSS is characterized and investigated. RSS brings huge device degradation. A dynamic hot carrier (HC) effect, dependent on transition edges of RSS, dominates the degradation. Combined with a transient simulation, the degradation mechanism under RSS in poly-Si TFTs is discussed and developed. To suppress RSS-induced HC degradation, a bridged-grain (BG) structure is employed in the active layer of poly-Si TFTs. Via BG lines' reducing the lateral electric field in the channel at source/drain sides, the reliability of BG TFTs under RSS is significantly improved.
KW - Reversely synchronized stress
KW - bridged grain
KW - dynamic hot carrier
KW - polycrystalline silicon
KW - thin-film transistors
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000552970000016
UR - https://openalex.org/W3037367387
UR - https://www.scopus.com/pages/publications/85089469622
U2 - 10.1109/LED.2020.3005046
DO - 10.1109/LED.2020.3005046
M3 - Journal Article
SN - 0741-3106
VL - 41
SP - 1213
EP - 1216
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
M1 - 9125948
ER -