Abstract
In this letter, a reversely synchronized stress (RSS) is proposed to simulate the working condition of switching thin-film transistors (TFTs) in active-matrix displays. The reliability of polycrystalline silicon (poly-Si) TFTs under RSS is characterized and investigated. RSS brings huge device degradation. A dynamic hot carrier (HC) effect, dependent on transition edges of RSS, dominates the degradation. Combined with a transient simulation, the degradation mechanism under RSS in poly-Si TFTs is discussed and developed. To suppress RSS-induced HC degradation, a bridged-grain (BG) structure is employed in the active layer of poly-Si TFTs. Via BG lines' reducing the lateral electric field in the channel at source/drain sides, the reliability of BG TFTs under RSS is significantly improved.
| Original language | English |
|---|---|
| Article number | 9125948 |
| Pages (from-to) | 1213-1216 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 41 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 2020 |
Bibliographical note
Publisher Copyright:© 1980-2012 IEEE.
Keywords
- Reversely synchronized stress
- bridged grain
- dynamic hot carrier
- polycrystalline silicon
- thin-film transistors
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