Saturation velocity and velocity overshoot of inversion layer electrons and holes

Fariborz Assaderaghi; Dennis Sinitsky; Henry Gaw; Jeffrey Bokor; Ping K. Ko; Chenming Hu

Saturation velocity and velocity overshoot of inversion layer electrons and holes

Fariborz Assaderaghi^*, Dennis Sinitsky, Henry Gaw, Jeffrey Bokor, Ping K. Ko, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

14 Citations (Scopus)

Abstract

In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.

Original language	English
Pages (from-to)	479-482
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 11 Dec 1994 → 14 Dec 1994

Cite this

@article{4a438b4f268740baa09807d626c5ffb4,

title = "Saturation velocity and velocity overshoot of inversion layer electrons and holes",

abstract = "In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.",

author = "Fariborz Assaderaghi and Dennis Sinitsky and Henry Gaw and Jeffrey Bokor and Ko, \{Ping K.\} and Chenming Hu",

year = "1994",

language = "English",

pages = "479--482",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 IEEE International Electron Devices Meeting ; Conference date: 11-12-1994 Through 14-12-1994",

}

TY - JOUR

T1 - Saturation velocity and velocity overshoot of inversion layer electrons and holes

AU - Assaderaghi, Fariborz

AU - Sinitsky, Dennis

AU - Gaw, Henry

AU - Bokor, Jeffrey

AU - Ko, Ping K.

AU - Hu, Chenming

PY - 1994

Y1 - 1994

N2 - In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.

AB - In this paper we address the effect of a wide range of parameters on the high-field transport of inversion layer electrons and holes. The studied parameters include substrate doping level, surface micro-roughness, nitridation of the gate oxide, and device channel length. Our findings point to electron velocity overshoot at room temperature, dependence of electron and hole saturation velocity on nitridation of the gate oxide, and relative insensitivity of electron and hole mobility and saturation velocity to moderate surface roughness.

UR - https://www.scopus.com/pages/publications/0028758516

M3 - Conference article published in journal

AN - SCOPUS:0028758516

SN - 0163-1918

SP - 479

EP - 482

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1994 IEEE International Electron Devices Meeting

Y2 - 11 December 1994 through 14 December 1994

ER -

Saturation velocity and velocity overshoot of inversion layer electrons and holes

Abstract

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