Second harmonic generation in hexagonal SiC

Paul M. Lundquist*, Weiping Lin, George K. Wong, Manijeh Razeghi, John B. Ketterson

*Corresponding author for this work

Research output: Chapter in Book/Conference Proceeding/ReportConference Paper published in a bookpeer-review

1 Citation (Scopus)

Abstract

We report optical second harmonic generation measurements in single crystal α-SiC of polytype 6H. The sample was found to be optically uniaxial, consistent with the hexagonal symmetry of the crystal structure. The two independent components of the second order electric susceptibility tensor were determined to be d33 = 43 pm/V and d 31 = -4.3 pm/V. From this data the principle electro-optic coefficient was computed to be r33 = 100 pm/V. The corresponding figures of merit for nonlinear optical device operation compare favorably with leading materials such as lithium niobate and KTP, and thus the relatively convenient and inexpensive fabrication of 6H SiC thin films could prove useful for integrated optical devices.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGregory J. Quarles, Leon Esterowitz, Lap K. Cheng
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages407-414
Number of pages8
ISBN (Print)0819417262
Publication statusPublished - 1995
Externally publishedYes
EventSolid State Lasers and Nonlinear Crystals - San Jose, CA, USA
Duration: 5 Feb 19957 Feb 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2379
ISSN (Print)0277-786X

Conference

ConferenceSolid State Lasers and Nonlinear Crystals
CitySan Jose, CA, USA
Period5/02/957/02/95

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