Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells

X. D. Luo; C. Y. Hu; Z. Y. Xu; H. L. Luo; Y. Q. Wang; J. N. Wang; W. K. Ge

doi:10.1063/1.1521250

Selectively excited photoluminescence of GaAs_1-xSb_x/GaAs single quantum wells

X. D. Luo^*, C. Y. Hu, Z. Y. Xu, H. L. Luo, Y. Q. Wang, J. N. Wang, W. K. Ge

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal Article › peer-review

29 Citations (Scopus)

Abstract

GaAs_1-x-Sb_x/GaAs single quantum wells (QW) by selectively excited photoluminescence (SEPL) was studied. PL was observed from both type-I and type-II transitions. The two transitions exhibited different PL behavior under different excitation energies. The results provided direct information on the nature of the band alignment in GaAsSb/GaAs QW structures.

Original language	English
Pages (from-to)	3795-3797
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	20
DOIs	https://doi.org/10.1063/1.1521250
Publication status	Published - 11 Nov 2002

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@article{49d03e9e142942b9a6882bfed87a1efd,

title = "Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells",

abstract = "GaAs1-x-Sbx/GaAs single quantum wells (QW) by selectively excited photoluminescence (SEPL) was studied. PL was observed from both type-I and type-II transitions. The two transitions exhibited different PL behavior under different excitation energies. The results provided direct information on the nature of the band alignment in GaAsSb/GaAs QW structures.",

author = "Luo, \{X. D.\} and Hu, \{C. Y.\} and Xu, \{Z. Y.\} and Luo, \{H. L.\} and Wang, \{Y. Q.\} and Wang, \{J. N.\} and Ge, \{W. K.\}",

year = "2002",

month = nov,

day = "11",

doi = "10.1063/1.1521250",

language = "English",

volume = "81",

pages = "3795--3797",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells

AU - Luo, X. D.

AU - Hu, C. Y.

AU - Xu, Z. Y.

AU - Luo, H. L.

AU - Wang, Y. Q.

AU - Wang, J. N.

AU - Ge, W. K.

PY - 2002/11/11

Y1 - 2002/11/11

N2 - GaAs1-x-Sbx/GaAs single quantum wells (QW) by selectively excited photoluminescence (SEPL) was studied. PL was observed from both type-I and type-II transitions. The two transitions exhibited different PL behavior under different excitation energies. The results provided direct information on the nature of the band alignment in GaAsSb/GaAs QW structures.

AB - GaAs1-x-Sbx/GaAs single quantum wells (QW) by selectively excited photoluminescence (SEPL) was studied. PL was observed from both type-I and type-II transitions. The two transitions exhibited different PL behavior under different excitation energies. The results provided direct information on the nature of the band alignment in GaAsSb/GaAs QW structures.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000179042200031

UR - https://openalex.org/W1605590697

UR - https://www.scopus.com/pages/publications/0037065118

U2 - 10.1063/1.1521250

DO - 10.1063/1.1521250

M3 - Journal Article

SN - 0003-6951

VL - 81

SP - 3795

EP - 3797

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Selectively excited photoluminescence of GaAs_1-xSb_x/GaAs single quantum wells

Abstract

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