Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si

Tongde Huang; Jun Ma; Xing Lu; Zhao Jun Liu; Xueliang Zhu; Kei May Lau

doi:10.1002/pssc.201300493

Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si

Tongde Huang, Jun Ma, Xing Lu, Zhao Jun Liu, Xueliang Zhu, Kei May Lau^*

^*Corresponding author for this work

Division of Emerging Interdisciplinary Areas

Research output: Contribution to journal › Journal Article › peer-review

5 Citations (Scopus)

Abstract

This paper demonstrates the fabrication of self-aligned gate-last enhancement- and depletion-mode (E/D-mode) AlN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOSHEMTs). In addition, the effects of annealing on threshold voltage (V_th) are analyzed. The E and D-mode transistors were fabricated with Ni/Au and Ti/Au as the gate metal, respectively. The Ni/Au gated MOSHEMTs show V_th = +0.3 V after post-gate metallization annealing, and the Ti/Au gated MOSHEMTs without annealing show V_th= -1.8 V. In the E-mode (Ni/Au gated) transistors, the V_th shift after post-gate annealing is due to the decrease of fixed charges at the Al₂O₃/GaN interface. An investigation has been conducted for the understanding of the V_th shift, which is crucial for improving the transistors' stability in various applications.

Original language	English
Pages (from-to)	890-893
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201300493
Publication status	Published - Apr 2014

Keywords

AlN/GaN MOSHEMT
Enhancement-/depletion-mode
Interface fixed charge
Self-aligned gate-last

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10.1002/pssc.201300493

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@article{aa62156181854879a92c6601ac922b6d,

title = "Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si",

abstract = "This paper demonstrates the fabrication of self-aligned gate-last enhancement- and depletion-mode (E/D-mode) AlN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOSHEMTs). In addition, the effects of annealing on threshold voltage (Vth) are analyzed. The E and D-mode transistors were fabricated with Ni/Au and Ti/Au as the gate metal, respectively. The Ni/Au gated MOSHEMTs show Vth = +0.3 V after post-gate metallization annealing, and the Ti/Au gated MOSHEMTs without annealing show Vth= -1.8 V. In the E-mode (Ni/Au gated) transistors, the Vth shift after post-gate annealing is due to the decrease of fixed charges at the Al2O3/GaN interface. An investigation has been conducted for the understanding of the Vth shift, which is crucial for improving the transistors' stability in various applications.",

keywords = "AlN/GaN MOSHEMT, Enhancement-/depletion-mode, Interface fixed charge, Self-aligned gate-last",

author = "Tongde Huang and Jun Ma and Xing Lu and Liu, \{Zhao Jun\} and Xueliang Zhu and Lau, \{Kei May\}",

year = "2014",

month = apr,

doi = "10.1002/pssc.201300493",

language = "English",

volume = "11",

pages = "890--893",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3-4",

}

TY - JOUR

T1 - Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si

AU - Huang, Tongde

AU - Ma, Jun

AU - Lu, Xing

AU - Liu, Zhao Jun

AU - Zhu, Xueliang

AU - Lau, Kei May

PY - 2014/4

Y1 - 2014/4

N2 - This paper demonstrates the fabrication of self-aligned gate-last enhancement- and depletion-mode (E/D-mode) AlN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOSHEMTs). In addition, the effects of annealing on threshold voltage (Vth) are analyzed. The E and D-mode transistors were fabricated with Ni/Au and Ti/Au as the gate metal, respectively. The Ni/Au gated MOSHEMTs show Vth = +0.3 V after post-gate metallization annealing, and the Ti/Au gated MOSHEMTs without annealing show Vth= -1.8 V. In the E-mode (Ni/Au gated) transistors, the Vth shift after post-gate annealing is due to the decrease of fixed charges at the Al2O3/GaN interface. An investigation has been conducted for the understanding of the Vth shift, which is crucial for improving the transistors' stability in various applications.

AB - This paper demonstrates the fabrication of self-aligned gate-last enhancement- and depletion-mode (E/D-mode) AlN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOSHEMTs). In addition, the effects of annealing on threshold voltage (Vth) are analyzed. The E and D-mode transistors were fabricated with Ni/Au and Ti/Au as the gate metal, respectively. The Ni/Au gated MOSHEMTs show Vth = +0.3 V after post-gate metallization annealing, and the Ti/Au gated MOSHEMTs without annealing show Vth= -1.8 V. In the E-mode (Ni/Au gated) transistors, the Vth shift after post-gate annealing is due to the decrease of fixed charges at the Al2O3/GaN interface. An investigation has been conducted for the understanding of the Vth shift, which is crucial for improving the transistors' stability in various applications.

KW - AlN/GaN MOSHEMT

KW - Enhancement-/depletion-mode

KW - Interface fixed charge

KW - Self-aligned gate-last

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000346071300129

UR - https://openalex.org/W1556231410

UR - https://www.scopus.com/pages/publications/84898549327

U2 - 10.1002/pssc.201300493

DO - 10.1002/pssc.201300493

M3 - Journal Article

SN - 1862-6351

VL - 11

SP - 890

EP - 893

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

ER -

Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si

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Keywords

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