TY - JOUR
T1 - Self-aligned indium-gallium-zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic
AU - Chen, Rongsheng
AU - Zhou, Wei
AU - Zhang, Meng
AU - Wong, Man
AU - Kwok, Hoi Sing
PY - 2013
Y1 - 2013
N2 - Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm2Vs, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and on/off current ratio of 9 × 10 7.
AB - Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm2Vs, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and on/off current ratio of 9 × 10 7.
KW - Amorphous indium-gallium-zinc oxide (a-IGZO)
KW - arsenic
KW - self-aligned
KW - thin-film transistors (TFTs)
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000312834200020
UR - https://openalex.org/W2069630665
UR - https://www.scopus.com/pages/publications/84871736877
U2 - 10.1109/LED.2012.2223192
DO - 10.1109/LED.2012.2223192
M3 - Journal Article
SN - 0741-3106
VL - 34
SP - 60
EP - 62
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 1
M1 - 6361261
ER -