Self-aligned top-gate zinc oxide thin film transistors fabricated by reactive sputtering of metallic zinc target

Meng Zhang; Zhihe Xia; Wei Zhou; Rongsheng Chen; Man Wong; Hoi Sing Kwok

doi:10.1002/sdtp.10045

Self-aligned top-gate zinc oxide thin film transistors fabricated by reactive sputtering of metallic zinc target

Meng Zhang, Zhihe Xia, Wei Zhou, Rongsheng Chen, Man Wong, Hoi Sing Kwok

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Conference article published in journal › peer-review

1 Citation (Scopus)

Abstract

Self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by reactive sputtering of metallic zinc target By optimizing deposition conditions, high-performance TFTs with a field effect mobility of 37.5 cm2/vs and an on/off ratio of 3.8∗108 was obtained.

Original language	English
Pages (from-to)	1173-1175
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 3
DOIs	https://doi.org/10.1002/sdtp.10045
Publication status	Published - 1 Jun 2015
Event	2015 SID International Symposium - San Jose, United States Duration: 2 Jun 2015 → 3 Jun 2015

Bibliographical note

Publisher Copyright:
© 2015 SID.

Keywords

Metal target
Self-align
Thin film transistors
Zinc oxide

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10.1002/sdtp.10045

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title = "Self-aligned top-gate zinc oxide thin film transistors fabricated by reactive sputtering of metallic zinc target",

abstract = "Self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by reactive sputtering of metallic zinc target By optimizing deposition conditions, high-performance TFTs with a field effect mobility of 37.5 cm2/vs and an on/off ratio of 3.8∗108 was obtained.",

keywords = "Metal target, Self-align, Thin film transistors, Zinc oxide",

author = "Meng Zhang and Zhihe Xia and Wei Zhou and Rongsheng Chen and Man Wong and Kwok, \{Hoi Sing\}",

note = "Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 02-06-2015 Through 03-06-2015",

year = "2015",

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doi = "10.1002/sdtp.10045",

language = "English",

volume = "46",

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T1 - Self-aligned top-gate zinc oxide thin film transistors fabricated by reactive sputtering of metallic zinc target

AU - Zhang, Meng

AU - Xia, Zhihe

AU - Zhou, Wei

AU - Chen, Rongsheng

AU - Wong, Man

AU - Kwok, Hoi Sing

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by reactive sputtering of metallic zinc target By optimizing deposition conditions, high-performance TFTs with a field effect mobility of 37.5 cm2/vs and an on/off ratio of 3.8∗108 was obtained.

AB - Self-aligned top-gate zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by reactive sputtering of metallic zinc target By optimizing deposition conditions, high-performance TFTs with a field effect mobility of 37.5 cm2/vs and an on/off ratio of 3.8∗108 was obtained.

KW - Metal target

KW - Self-align

KW - Thin film transistors

KW - Zinc oxide

UR - https://openalex.org/W2527561280

UR - https://www.scopus.com/pages/publications/84962778849

U2 - 10.1002/sdtp.10045

DO - 10.1002/sdtp.10045

M3 - Conference article published in journal

SN - 0097-966X

VL - 46

SP - 1173

EP - 1175

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 3

T2 - 2015 SID International Symposium

Y2 - 2 June 2015 through 3 June 2015

ER -

Self-aligned top-gate zinc oxide thin film transistors fabricated by reactive sputtering of metallic zinc target

Abstract

Bibliographical note

Keywords

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