Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes

Leidang Zhou; Xing Lu; Jin Wu; Huaxing Jiang; Liang Chen; Xiaoping Ouyang; Kei May Lau

doi:10.1109/LED.2019.2914585

Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes

Leidang Zhou, Xing Lu^*, Jin Wu, Huaxing Jiang, Liang Chen, Xiaoping Ouyang, Kei May Lau

^*Corresponding author for this work

Division of Emerging Interdisciplinary Areas

Research output: Contribution to journal › Journal Article › peer-review

43 Citations (Scopus)

Abstract

GaN offers an excellent potential for fabricating X-ray detectors, taking advantage of its superior material properties and well-developed manufacturing technologies. In this letter, we demonstrated a self-powered fast-response X-ray detection using GaN-based vertical p-n diodes grown on a bulk GaN substrate. Attributed to the high crystalline quality achieved by homoepitaxy, the fabricated photodiodes exhibited an excellent rectification behavior, and therefore, a strong photovoltaic response to X-ray illumination when biased at 0 V. The transient X-ray detection analysis revealed that the self-powered detectors have a relatively short response time (<20 ms) and a good linear response to the X-ray incident dose rate with a high specific sensitivity of 170 nC·Gy^-1·cm^-2.

Original language	English
Article number	8705386
Pages (from-to)	1044-1047
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1109/LED.2019.2914585
Publication status	Published - Jul 2019

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy
SDG 9 Industry, Innovation, and Infrastructure

Keywords

GaN
X-ray detectors
p-n diode
self-powered

Access to Document

10.1109/LED.2019.2914585

Cite this

@article{38040084ad67439b9a6ac8cb40978797,

title = "Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes",

abstract = "GaN offers an excellent potential for fabricating X-ray detectors, taking advantage of its superior material properties and well-developed manufacturing technologies. In this letter, we demonstrated a self-powered fast-response X-ray detection using GaN-based vertical p-n diodes grown on a bulk GaN substrate. Attributed to the high crystalline quality achieved by homoepitaxy, the fabricated photodiodes exhibited an excellent rectification behavior, and therefore, a strong photovoltaic response to X-ray illumination when biased at 0 V. The transient X-ray detection analysis revealed that the self-powered detectors have a relatively short response time (<20 ms) and a good linear response to the X-ray incident dose rate with a high specific sensitivity of 170 nC·Gy-1·cm-2.",

keywords = "GaN, X-ray detectors, p-n diode, self-powered",

author = "Leidang Zhou and Xing Lu and Jin Wu and Huaxing Jiang and Liang Chen and Xiaoping Ouyang and Lau, \{Kei May\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2019",

month = jul,

doi = "10.1109/LED.2019.2914585",

language = "English",

volume = "40",

pages = "1044--1047",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes

AU - Zhou, Leidang

AU - Lu, Xing

AU - Wu, Jin

AU - Jiang, Huaxing

AU - Chen, Liang

AU - Ouyang, Xiaoping

AU - Lau, Kei May

PY - 2019/7

Y1 - 2019/7

N2 - GaN offers an excellent potential for fabricating X-ray detectors, taking advantage of its superior material properties and well-developed manufacturing technologies. In this letter, we demonstrated a self-powered fast-response X-ray detection using GaN-based vertical p-n diodes grown on a bulk GaN substrate. Attributed to the high crystalline quality achieved by homoepitaxy, the fabricated photodiodes exhibited an excellent rectification behavior, and therefore, a strong photovoltaic response to X-ray illumination when biased at 0 V. The transient X-ray detection analysis revealed that the self-powered detectors have a relatively short response time (<20 ms) and a good linear response to the X-ray incident dose rate with a high specific sensitivity of 170 nC·Gy-1·cm-2.

AB - GaN offers an excellent potential for fabricating X-ray detectors, taking advantage of its superior material properties and well-developed manufacturing technologies. In this letter, we demonstrated a self-powered fast-response X-ray detection using GaN-based vertical p-n diodes grown on a bulk GaN substrate. Attributed to the high crystalline quality achieved by homoepitaxy, the fabricated photodiodes exhibited an excellent rectification behavior, and therefore, a strong photovoltaic response to X-ray illumination when biased at 0 V. The transient X-ray detection analysis revealed that the self-powered detectors have a relatively short response time (<20 ms) and a good linear response to the X-ray incident dose rate with a high specific sensitivity of 170 nC·Gy-1·cm-2.

KW - GaN

KW - X-ray detectors

KW - p-n diode

KW - self-powered

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000473441400004

UR - https://openalex.org/W2943035770

UR - https://www.scopus.com/pages/publications/85068152208

U2 - 10.1109/LED.2019.2914585

DO - 10.1109/LED.2019.2914585

M3 - Journal Article

SN - 0741-3106

VL - 40

SP - 1044

EP - 1047

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 8705386

ER -

Self-powered fast-response X-Ray detectors based on vertical GaN p-n Diodes

Abstract

Bibliographical note

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Cite this