Abstract
Short circuit capability of a 1200V SiC MOSFET and a 1200V Si IGBT is compared and analyzed in this work, and the channel mobility in the SiC MOSFET over a broad temperature range from room temperature up to 2000 °C has been extracted for the first time. Experimental results show that SiC MOSFET exhibits shorter short circuit withstand time (SCWT) compared to Si IGBT. 1-D transient finite element thermal models of SiC MOSFETs and Si IGBTs have been implemented to simulate the dynamic temperature profiles in devices during short circuit tests. The junction temperature of SiC MOSFET rises much faster than that of Si IGBT and the heat spreading thickness of SiC MOSFET is much narrower, leading to shorter SCWT of the SiC MOSFET. Combining the experimental and thermal simulation results, the temperature-dependent saturation drain current in SiC MOSFETs is extracted. Based on this, the channel mobility over a wide temperature range is obtained.
| Original language | English |
|---|---|
| Article number | 7988988 |
| Pages (from-to) | 399-402 |
| Number of pages | 4 |
| Journal | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
| DOIs | |
| Publication status | Published - 2017 |
| Externally published | Yes |
| Event | 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, Japan Duration: 28 May 2017 → 1 Jun 2017 |
Bibliographical note
Publisher Copyright:© 2017 IEEJ.
Keywords
- 1-D thermal simulation
- High temperature channel mobility
- Short circuit capability
- Silicon Carbide (SiC) power MOSFET