Shubnikov-de Haas oscillations on molecular-beam-epitaxy-grown Hg _1-xCd_xTe alloy doped with indium

Shubnikov-de Haas oscillations on the transverse resistivity ρ_xx and longitudinal resistivity ρ_zz of as-grown indium-doped alloys of Hg_1-xCd_xTe (0.24<x<0.34) grown by molecular-beam epitaxy on (111)B and (100) growth directions are observed in the temperature range from 1.2 to 25 K and in fields up to 12 T. The n-type density from the periodicity, the effective mass m* from the temperature dependence of the amplitude, and the Dingle temperature T _D are determined from ρ_xx and ρ_zz oscillations. The oscillations establish the high Hall density which is found at low fields. The T_D in ρ_xx is found to be higher in comparison to T_D in ρ_zz. However, this difference decreases as the Hall density increases. The T_D discrepancy is probably due to greater inhomogeneity in the plane of the layer. The T _D is higher than the temperature calculated from the weak-field Hall mobility. The density and effective mass are used to calculate the energy band gap, Fermi energy, and the band-edge effective mass. The calculated energy band gaps are in good agreement with the reported results.