Silicon-migration technology for MEMS-CMOS monolithic integration

Fan Zeng; Man Wong

doi:10.1109/ICSICT.2014.7021216

Silicon-migration technology for MEMS-CMOS monolithic integration

Fan Zeng, Man Wong

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

A scheme for the monolithic integration of complementary metal-oxide-semiconductor (CMOS) circuits and microelectromechanical systems (MEMS) based on the silicon-migration technology (SiMiT) is developed. The process-incompatibility issues inherently present in traditional integration schemes are largely avoided by the elimination of the sacrificial layer etch. This pre-CMOS integration scheme is demonstrated using a 16×16 active-matrix tactile sensor 'addressed' with an integrated ring counter.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021216
Publication status	Published - 23 Jan 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

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10.1109/ICSICT.2014.7021216

Cite this

Zeng, F., & Wong, M. (2014). Silicon-migration technology for MEMS-CMOS monolithic integration. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021216 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021216

Zeng, Fan ; Wong, Man. / Silicon-migration technology for MEMS-CMOS monolithic integration. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{f6310254b4234ecdbf26ec4c110a17a3,

title = "Silicon-migration technology for MEMS-CMOS monolithic integration",

abstract = "A scheme for the monolithic integration of complementary metal-oxide-semiconductor (CMOS) circuits and microelectromechanical systems (MEMS) based on the silicon-migration technology (SiMiT) is developed. The process-incompatibility issues inherently present in traditional integration schemes are largely avoided by the elimination of the sacrificial layer etch. This pre-CMOS integration scheme is demonstrated using a 16×16 active-matrix tactile sensor 'addressed' with an integrated ring counter.",

author = "Fan Zeng and Man Wong",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021216",

language = "English",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

}

Zeng, F & Wong, M 2014, Silicon-migration technology for MEMS-CMOS monolithic integration. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021216, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021216

Silicon-migration technology for MEMS-CMOS monolithic integration. / Zeng, Fan; Wong, Man.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021216 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Silicon-migration technology for MEMS-CMOS monolithic integration

AU - Zeng, Fan

AU - Wong, Man

PY - 2014/1/23

Y1 - 2014/1/23

N2 - A scheme for the monolithic integration of complementary metal-oxide-semiconductor (CMOS) circuits and microelectromechanical systems (MEMS) based on the silicon-migration technology (SiMiT) is developed. The process-incompatibility issues inherently present in traditional integration schemes are largely avoided by the elimination of the sacrificial layer etch. This pre-CMOS integration scheme is demonstrated using a 16×16 active-matrix tactile sensor 'addressed' with an integrated ring counter.

AB - A scheme for the monolithic integration of complementary metal-oxide-semiconductor (CMOS) circuits and microelectromechanical systems (MEMS) based on the silicon-migration technology (SiMiT) is developed. The process-incompatibility issues inherently present in traditional integration schemes are largely avoided by the elimination of the sacrificial layer etch. This pre-CMOS integration scheme is demonstrated using a 16×16 active-matrix tactile sensor 'addressed' with an integrated ring counter.

UR - https://openalex.org/W2056264433

UR - https://www.scopus.com/pages/publications/84946693492

U2 - 10.1109/ICSICT.2014.7021216

DO - 10.1109/ICSICT.2014.7021216

M3 - Conference Paper published in a book

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Zeng F, Wong M. Silicon-migration technology for MEMS-CMOS monolithic integration. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021216. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021216

Silicon-migration technology for MEMS-CMOS monolithic integration

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