Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation

Chenfei Zhang; Jin He; Mansun Chan; Caixia Du; Qingxing He; Yun Ye; Wei Zhao; Wen Wu; Xiangyu Zhang; Wenping Wang

Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation

Chenfei Zhang, Jin He, Mansun Chan, Caixia Du, Qingxing He, Yun Ye, Wei Zhao, Wen Wu, Xiangyu Zhang, Wenping Wang

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from the reaction-diffusion (R-D) theory and calibrated by the measurement data. It is experimentally shown that the rate of threshold voltage change of the SNWFET is not constant but varies with stress time under pure electrical stress condition. Overall, it follows a single exponential function with a nominal value of 0.25 under the NBTI stress condition. In addition, it is observed from the derived model and measurement data that the hydrogen diffusion constant varies from 0.8 to 0.52 as the recovery time increases in the recovery process. The developed model has been implemented into a circuit simulator and the effects of NBTI on the delays of the digital gates and oscillator circuits have been evaluated.

Original language	English
Title of host publication	Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Publisher	Nano Science and Technology Institute
Pages	525-528
Number of pages	4
ISBN (Print)	9781482258271
Publication status	Published - 2014
Event	Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States Duration: 15 Jun 2014 → 18 Jun 2014

Publication series

Name	Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Volume	2

Conference

Conference	Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Country/Territory	United States
City	Washington, DC
Period	15/06/14 → 18/06/14

Keywords

Circuit
Modeling
NBTI
Nanowire
Reaction-diffusion

Cite this

Zhang, C., He, J., Chan, M., Du, C., He, Q., Ye, Y., Zhao, W., Wu, W., Zhang, X., & Wang, W. (2014). Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (pp. 525-528). (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; Vol. 2). Nano Science and Technology Institute.

Zhang, Chenfei ; He, Jin ; Chan, Mansun et al. / Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, 2014. pp. 525-528 (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014).

@inproceedings{e74c060f5b1e4c77bc9bc8744021befb,

title = "Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation",

abstract = "A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from the reaction-diffusion (R-D) theory and calibrated by the measurement data. It is experimentally shown that the rate of threshold voltage change of the SNWFET is not constant but varies with stress time under pure electrical stress condition. Overall, it follows a single exponential function with a nominal value of 0.25 under the NBTI stress condition. In addition, it is observed from the derived model and measurement data that the hydrogen diffusion constant varies from 0.8 to 0.52 as the recovery time increases in the recovery process. The developed model has been implemented into a circuit simulator and the effects of NBTI on the delays of the digital gates and oscillator circuits have been evaluated.",

keywords = "Circuit, Modeling, NBTI, Nanowire, Reaction-diffusion",

author = "Chenfei Zhang and Jin He and Mansun Chan and Caixia Du and Qingxing He and Yun Ye and Wei Zhao and Wen Wu and Xiangyu Zhang and Wenping Wang",

year = "2014",

language = "English",

isbn = "9781482258271",

series = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",

publisher = "Nano Science and Technology Institute",

pages = "525--528",

booktitle = "Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014",

note = "Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 ; Conference date: 15-06-2014 Through 18-06-2014",

}

Zhang, C, He, J, Chan, M, Du, C, He, Q, Ye, Y, Zhao, W, Wu, W, Zhang, X & Wang, W 2014, Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation. in Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, vol. 2, Nano Science and Technology Institute, pp. 525-528, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, United States, 15/06/14.

Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation. / Zhang, Chenfei; He, Jin; Chan, Mansun et al.
Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, 2014. p. 525-528 (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; Vol. 2).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation

AU - Zhang, Chenfei

AU - He, Jin

AU - Chan, Mansun

AU - Du, Caixia

AU - He, Qingxing

AU - Ye, Yun

AU - Zhao, Wei

AU - Wu, Wen

AU - Zhang, Xiangyu

AU - Wang, Wenping

PY - 2014

Y1 - 2014

N2 - A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from the reaction-diffusion (R-D) theory and calibrated by the measurement data. It is experimentally shown that the rate of threshold voltage change of the SNWFET is not constant but varies with stress time under pure electrical stress condition. Overall, it follows a single exponential function with a nominal value of 0.25 under the NBTI stress condition. In addition, it is observed from the derived model and measurement data that the hydrogen diffusion constant varies from 0.8 to 0.52 as the recovery time increases in the recovery process. The developed model has been implemented into a circuit simulator and the effects of NBTI on the delays of the digital gates and oscillator circuits have been evaluated.

AB - A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from the reaction-diffusion (R-D) theory and calibrated by the measurement data. It is experimentally shown that the rate of threshold voltage change of the SNWFET is not constant but varies with stress time under pure electrical stress condition. Overall, it follows a single exponential function with a nominal value of 0.25 under the NBTI stress condition. In addition, it is observed from the derived model and measurement data that the hydrogen diffusion constant varies from 0.8 to 0.52 as the recovery time increases in the recovery process. The developed model has been implemented into a circuit simulator and the effects of NBTI on the delays of the digital gates and oscillator circuits have been evaluated.

KW - Circuit

KW - Modeling

KW - NBTI

KW - Nanowire

KW - Reaction-diffusion

UR - https://www.scopus.com/pages/publications/84907398283

M3 - Conference Paper published in a book

AN - SCOPUS:84907398283

SN - 9781482258271

T3 - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

SP - 525

EP - 528

BT - Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

PB - Nano Science and Technology Institute

T2 - Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014

Y2 - 15 June 2014 through 18 June 2014

ER -

Zhang C, He J, Chan M, Du C, He Q, Ye Y et al. Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation. In Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute. 2014. p. 525-528. (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014).

Silicon nanowire metal-oxide-semiconductor field effect transistor NBTI effect modeling and application in circuit performance simulation

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