Simulating radiation reliability with BERT

Paolo Pavan; Robert Tu; Eric Minami; Gary Lum; Ping K. Ko; Chenming Hu

doi:10.1016/0026-2692(95)00022-A

Simulating radiation reliability with BERT

Paolo Pavan^*, Robert Tu, Eric Minami, Gary Lum, Ping K. Ko, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

2 Citations (Scopus)

Abstract

This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.

Original language	English
Pages (from-to)	627-633
Number of pages	7
Journal	Microelectronics Journal
Volume	26
Issue number	6
DOIs	https://doi.org/10.1016/0026-2692(95)00022-A
Publication status	Published - Sept 1995
Externally published	Yes

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title = "Simulating radiation reliability with BERT",

abstract = "This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.",

author = "Paolo Pavan and Robert Tu and Eric Minami and Gary Lum and Ko, \{Ping K.\} and Chenming Hu",

year = "1995",

month = sep,

doi = "10.1016/0026-2692(95)00022-A",

language = "English",

volume = "26",

pages = "627--633",

journal = "Microelectronics Journal",

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T1 - Simulating radiation reliability with BERT

AU - Pavan, Paolo

AU - Tu, Robert

AU - Minami, Eric

AU - Lum, Gary

AU - Ko, Ping K.

AU - Hu, Chenming

PY - 1995/9

Y1 - 1995/9

N2 - This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.

AB - This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.

UR - http://www.scopus.com/inward/record.url?scp=0029377997&partnerID=8YFLogxK

U2 - 10.1016/0026-2692(95)00022-A

DO - 10.1016/0026-2692(95)00022-A

M3 - Journal Article

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SN - 0026-2692

VL - 26

SP - 627

EP - 633

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 6

ER -

Simulating radiation reliability with BERT

Abstract

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