Simulating the effects of single-event and radiation phenomena on GaAs MESFET integrated circuits

Peter George; Ping K. Ko; Chenmlng Hu

doi:10.1109/CICC.1989.56725

Simulating the effects of single-event and radiation phenomena on GaAs MESFET integrated circuits

Peter George^*, Ping K. Ko, Chenmlng Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

4 Citations (Scopus)

Abstract

This paper describes a device model for the simulation of the effects of single-event and radiation phenomena on the operation of GaAs MESFETs. The model can be utilized in a circuit simulator to evaluate integrated circuit designs and aid in the provision of adequate upset margins for various operating environments. Additional sub-circuit construction is unnecessary since the electrical responses to the different phenomena are intrinsic to the device template. Example simulations using SPICE3 are described.

Original language	English
Article number	5726192
Pages (from-to)	9.7.1-9.7.4
Journal	Proceedings of the Custom Integrated Circuits Conference
DOIs	https://doi.org/10.1109/CICC.1989.56725
Publication status	Published - 1989
Externally published	Yes
Event	11th IEEE 1989 Custom Integrated Circuits Conference, CICC'89 - San Diego, CA, United States Duration: 15 May 1989 → 18 May 1989

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10.1109/CICC.1989.56725

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title = "Simulating the effects of single-event and radiation phenomena on GaAs MESFET integrated circuits",

abstract = "This paper describes a device model for the simulation of the effects of single-event and radiation phenomena on the operation of GaAs MESFETs. The model can be utilized in a circuit simulator to evaluate integrated circuit designs and aid in the provision of adequate upset margins for various operating environments. Additional sub-circuit construction is unnecessary since the electrical responses to the different phenomena are intrinsic to the device template. Example simulations using SPICE3 are described.",

author = "Peter George and Ko, \{Ping K.\} and Chenmlng Hu",

year = "1989",

doi = "10.1109/CICC.1989.56725",

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AU - Ko, Ping K.

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AB - This paper describes a device model for the simulation of the effects of single-event and radiation phenomena on the operation of GaAs MESFETs. The model can be utilized in a circuit simulator to evaluate integrated circuit designs and aid in the provision of adequate upset margins for various operating environments. Additional sub-circuit construction is unnecessary since the electrical responses to the different phenomena are intrinsic to the device template. Example simulations using SPICE3 are described.

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U2 - 10.1109/CICC.1989.56725

DO - 10.1109/CICC.1989.56725

M3 - Conference article published in journal

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SN - 0886-5930

SP - 9.7.1-9.7.4

JO - Proceedings of the Custom Integrated Circuits Conference

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T2 - 11th IEEE 1989 Custom Integrated Circuits Conference, CICC'89

Y2 - 15 May 1989 through 18 May 1989

ER -

Simulating the effects of single-event and radiation phenomena on GaAs MESFET integrated circuits

Abstract

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