Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

Fangzhou Wang; Wanjun Chen; Zeheng Wang; Ruize Sun; Jin Wei; Xuan Li; Yijun Shi; Xiaosheng Jin; Xiaorui Xu; Nan Chen; Qi Zhou; Bo Zhang

doi:10.1016/j.spmi.2017.03.029

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

Fangzhou Wang
, Wanjun Chen^*
, Zeheng Wang
, Ruize Sun
, Jin Wei
, Xuan Li
, Yijun Shi
, Xiaosheng Jin
, Xiaorui Xu
, Nan Chen
, Qi Zhou
, Bo Zhang

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

12 Citations (Scopus)

Abstract

To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. V_T has a low saturation value when trench height (H_T) is beyond 300 nm, confirming it is possible to control the V_T accurately without precisely controlling the H_T in the THA-FER. Meanwhile, high H_T anode reduces reverse leakage current and yields high breakdown voltage (V_B). A superior high Baliga's Figure of Merits (BFOM = V_B²/R_on,sp, R_on,sp is specific-on resistance) of 1228 MW/cm² reveals the THA-FER caters for the demands of high efficiency GaN power applications.

Original language	English
Pages (from-to)	132-138
Number of pages	7
Journal	Superlattices and Microstructures
Volume	105
DOIs	https://doi.org/10.1016/j.spmi.2017.03.029
Publication status	Published - 1 May 2017

Bibliographical note

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

AlGaN/GaN power rectifier
High breakdown voltage
Trench heterojunction anode
Uniform turn-on voltage

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10.1016/j.spmi.2017.03.029

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@article{905a48fd28914a50aae968be3a8127a5,

title = "Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode",

abstract = "To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.",

keywords = "AlGaN/GaN power rectifier, High breakdown voltage, Trench heterojunction anode, Uniform turn-on voltage",

author = "Fangzhou Wang and Wanjun Chen and Zeheng Wang and Ruize Sun and Jin Wei and Xuan Li and Yijun Shi and Xiaosheng Jin and Xiaorui Xu and Nan Chen and Qi Zhou and Bo Zhang",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = may,

day = "1",

doi = "10.1016/j.spmi.2017.03.029",

language = "English",

volume = "105",

pages = "132--138",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

AU - Wang, Fangzhou

AU - Chen, Wanjun

AU - Wang, Zeheng

AU - Sun, Ruize

AU - Wei, Jin

AU - Li, Xuan

AU - Shi, Yijun

AU - Jin, Xiaosheng

AU - Xu, Xiaorui

AU - Chen, Nan

AU - Zhou, Qi

AU - Zhang, Bo

PY - 2017/5/1

Y1 - 2017/5/1

N2 - To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.

AB - To achieve uniform low turn-on voltage and high reverse blocking capability, an AlGaN/GaN power field effect rectifier with trench heterojunction anode (THA-FER) is proposed and investigated in this work which includes only simulated data and no real experimental result. VT has a low saturation value when trench height (HT) is beyond 300 nm, confirming it is possible to control the VT accurately without precisely controlling the HT in the THA-FER. Meanwhile, high HT anode reduces reverse leakage current and yields high breakdown voltage (VB). A superior high Baliga's Figure of Merits (BFOM = VB2/Ron,sp, Ron,sp is specific-on resistance) of 1228 MW/cm2 reveals the THA-FER caters for the demands of high efficiency GaN power applications.

KW - AlGaN/GaN power rectifier

KW - High breakdown voltage

KW - Trench heterojunction anode

KW - Uniform turn-on voltage

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000401204300016

UR - https://openalex.org/W2603046780

U2 - 10.1016/j.spmi.2017.03.029

DO - 10.1016/j.spmi.2017.03.029

M3 - Journal Article

SN - 0749-6036

VL - 105

SP - 132

EP - 138

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

Abstract

Bibliographical note

Keywords

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