Simulation of the CMS prototype silicon pixel sensors and comparison with test beam measurements

Vincenzo Chiochia; Morris Swartz; Daniela Bortoletto; Lucien Cremaldi; Susanna Cucciarelli; Andrei Dorokhov; Marcin Konecki; Kirill Prokofiev; Christian Regenfus; Tilman Rohe; David A. Sanders; Seunghee Son; Thomas Speer

Simulation of the CMS prototype silicon pixel sensors and comparison with test beam measurements

Vincenzo Chiochia^*, Morris Swartz, Daniela Bortoletto, Lucien Cremaldi, Susanna Cucciarelli, Andrei Dorokhov, Marcin Konecki, Kirill Prokofiev, Christian Regenfus, Tilman Rohe, David A. Sanders, Seunghee Son, Thomas Speer

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

1 Citation (Scopus)

Abstract

Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.

Original language	English
Article number	N28-7
Pages (from-to)	1245-1250
Number of pages	6
Journal	IEEE Nuclear Science Symposium Conference Record
Volume	2
Publication status	Published - 2004
Externally published	Yes
Event	2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors - Rome, Italy Duration: 16 Oct 2004 → 22 Oct 2004

Cite this

@article{8fcff174a8854a82919e536d9e0494f3,

title = "Simulation of the CMS prototype silicon pixel sensors and comparison with test beam measurements",

abstract = "Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.",

author = "Vincenzo Chiochia and Morris Swartz and Daniela Bortoletto and Lucien Cremaldi and Susanna Cucciarelli and Andrei Dorokhov and Marcin Konecki and Kirill Prokofiev and Christian Regenfus and Tilman Rohe and Sanders, \{David A.\} and Seunghee Son and Thomas Speer",

year = "2004",

language = "English",

volume = "2",

pages = "1245--1250",

journal = "IEEE Nuclear Science Symposium Conference Record",

issn = "1095-7863",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors ; Conference date: 16-10-2004 Through 22-10-2004",

}

TY - JOUR

T1 - Simulation of the CMS prototype silicon pixel sensors and comparison with test beam measurements

AU - Chiochia, Vincenzo

AU - Swartz, Morris

AU - Bortoletto, Daniela

AU - Cremaldi, Lucien

AU - Cucciarelli, Susanna

AU - Dorokhov, Andrei

AU - Konecki, Marcin

AU - Prokofiev, Kirill

AU - Regenfus, Christian

AU - Rohe, Tilman

AU - Sanders, David A.

AU - Son, Seunghee

AU - Speer, Thomas

PY - 2004

Y1 - 2004

N2 - Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.

AB - Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.

UR - https://www.scopus.com/pages/publications/23844488804

M3 - Conference article published in journal

AN - SCOPUS:23844488804

SN - 1095-7863

VL - 2

SP - 1245

EP - 1250

JO - IEEE Nuclear Science Symposium Conference Record

JF - IEEE Nuclear Science Symposium Conference Record

M1 - N28-7

T2 - 2004 Nuclear Science Symposium, Medical Imaging Conference, Symposium on Nuclear Power Systems and the 14th International Workshop on Room Temperature Semiconductor X- and Gamma- Ray Detectors

Y2 - 16 October 2004 through 22 October 2004

ER -

Simulation of the CMS prototype silicon pixel sensors and comparison with test beam measurements

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