SJ-FINFET: A new low voltage lateral superjunction MOSFET

Y. Onishi; H. Wang; H. P.E. Xu; W. T. Ng; R. Wu; J. K.O. Sin

doi:10.1109/ISPSD.2008.4538910

SJ-FINFET: A new low voltage lateral superjunction MOSFET

Y. Onishi^*, H. Wang, H. P.E. Xu, W. T. Ng, R. Wu, J. K.O. Sin

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

25 Citations (Scopus)

Abstract

This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (R_on,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI layer thickness, T_epi) of 4μm was simulated and found to have a R_on,sp of 0.18mΩ·cm². This is 21% lower than the well-known silicon limit at a breakdown voltage (BV_dss) of 68V.

Original language	English
Title of host publication	ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
Pages	111-114
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2008.4538910
Publication status	Published - 2008
Event	ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's - Orlando, FL, United States Duration: 18 May 2008 → 22 May 2008

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
Country/Territory	United States
City	Orlando, FL
Period	18/05/08 → 22/05/08

Access to Document

10.1109/ISPSD.2008.4538910

Cite this

Onishi, Y., Wang, H., Xu, H. P. E., Ng, W. T., Wu, R., & Sin, J. K. O. (2008). SJ-FINFET: A new low voltage lateral superjunction MOSFET. In ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's (pp. 111-114). Article 4538910 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2008.4538910

@inproceedings{7b3d1310eacb46aa9eb1b7e14a6238ab,

title = "SJ-FINFET: A new low voltage lateral superjunction MOSFET",

abstract = "This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI layer thickness, Tepi) of 4μm was simulated and found to have a Ron,sp of 0.18mΩ·cm2. This is 21\% lower than the well-known silicon limit at a breakdown voltage (BVdss) of 68V.",

author = "Y. Onishi and H. Wang and Xu, \{H. P.E.\} and Ng, \{W. T.\} and R. Wu and Sin, \{J. K.O.\}",

year = "2008",

doi = "10.1109/ISPSD.2008.4538910",

language = "English",

isbn = "1424415322",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

pages = "111--114",

booktitle = "ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's",

note = "ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's ; Conference date: 18-05-2008 Through 22-05-2008",

}

Onishi, Y, Wang, H, Xu, HPE, Ng, WT, Wu, R & Sin, JKO 2008, SJ-FINFET: A new low voltage lateral superjunction MOSFET. in ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's., 4538910, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 111-114, ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's, Orlando, FL, United States, 18/05/08. https://doi.org/10.1109/ISPSD.2008.4538910

SJ-FINFET: A new low voltage lateral superjunction MOSFET. / Onishi, Y.; Wang, H.; Xu, H. P.E. et al.
ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's. 2008. p. 111-114 4538910 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - SJ-FINFET

T2 - ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's

AU - Onishi, Y.

AU - Wang, H.

AU - Xu, H. P.E.

AU - Ng, W. T.

AU - Wu, R.

AU - Sin, J. K.O.

PY - 2008

Y1 - 2008

N2 - This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI layer thickness, Tepi) of 4μm was simulated and found to have a Ron,sp of 0.18mΩ·cm2. This is 21% lower than the well-known silicon limit at a breakdown voltage (BVdss) of 68V.

AB - This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI layer thickness, Tepi) of 4μm was simulated and found to have a Ron,sp of 0.18mΩ·cm2. This is 21% lower than the well-known silicon limit at a breakdown voltage (BVdss) of 68V.

UR - https://www.scopus.com/pages/publications/51549092310

U2 - 10.1109/ISPSD.2008.4538910

DO - 10.1109/ISPSD.2008.4538910

M3 - Conference Paper published in a book

AN - SCOPUS:51549092310

SN - 1424415322

SN - 9781424415328

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 111

EP - 114

BT - ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's

Y2 - 18 May 2008 through 22 May 2008

ER -

SJ-FINFET: A new low voltage lateral superjunction MOSFET

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this