Soft-Error-Aware Read-Decoupled SRAM with Multi-Node Recovery for Aerospace Applications

Soumitra Pal*, Sayonee Mohapatra, Wing Hung Ki, Aminul Islam

*Corresponding author for this work

Research output: Contribution to journalJournal Articlepeer-review

Abstract

In advanced technology nodes, SRAM cells, used in the aerospace industry, have become highly susceptible to soft-error. In this brief, a Soft-Error-Aware Read-Decoupled 14T (SAR14T) SRAM cell is proposed for aerospace applications. To assess the performance of the proposed cell, it is compared with other soft-error-aware SRAM cells, like WE-QUATRO, QUCCE12T, RHD12T, RSP14T and RHBD14T. Simulation results show that all the sensitive nodes of SAR14T can reattain their initial states after being impacted by soft-error. Furthermore, the cell is capable of recovering from multi-node upset induced at its internal node-pair. Due to the employment of the read-decoupling technique, SAR14T shows the highest read stability compared to its peers. The proposed cell also proves to be the superior SRAM in terms of write ability and write delay. All these improvements are accomplished at the expense of a slightly longer read delay.

Original languageEnglish
Pages (from-to)3336-3340
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume68
Issue number10
DOIs
Publication statusPublished - Oct 2021

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 9 - Industry, Innovation, and Infrastructure
    SDG 9 Industry, Innovation, and Infrastructure

Keywords

  • Critical charge
  • multi-node upset
  • radiation-hardened
  • read stability
  • single-event upset
  • soft-error
  • write ability

Fingerprint

Dive into the research topics of 'Soft-Error-Aware Read-Decoupled SRAM with Multi-Node Recovery for Aerospace Applications'. Together they form a unique fingerprint.

Cite this