Abstract
In advanced technology nodes, SRAM cells, used in the aerospace industry, have become highly susceptible to soft-error. In this brief, a Soft-Error-Aware Read-Decoupled 14T (SAR14T) SRAM cell is proposed for aerospace applications. To assess the performance of the proposed cell, it is compared with other soft-error-aware SRAM cells, like WE-QUATRO, QUCCE12T, RHD12T, RSP14T and RHBD14T. Simulation results show that all the sensitive nodes of SAR14T can reattain their initial states after being impacted by soft-error. Furthermore, the cell is capable of recovering from multi-node upset induced at its internal node-pair. Due to the employment of the read-decoupling technique, SAR14T shows the highest read stability compared to its peers. The proposed cell also proves to be the superior SRAM in terms of write ability and write delay. All these improvements are accomplished at the expense of a slightly longer read delay.
| Original language | English |
|---|---|
| Pages (from-to) | 3336-3340 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
| Volume | 68 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 2021 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 9 Industry, Innovation, and Infrastructure
Keywords
- Critical charge
- multi-node upset
- radiation-hardened
- read stability
- single-event upset
- soft-error
- write ability
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