Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

Chunlei Yang; Xiaodong Cui; Shun Qing Shen; Zhongying Xu; Weikun Ge

doi:10.1103/PhysRevB.80.035313

Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

Chunlei Yang^*, Xiaodong Cui, Shun Qing Shen, Zhongying Xu, Weikun Ge

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

5 Citations (Scopus)

Abstract

Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.

Original language	English
Article number	035313
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.80.035313
Publication status	Published - 6 Aug 2009
Externally published	Yes

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10.1103/PhysRevB.80.035313

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@article{efc576c61f84487590358025517ddcf9,

title = "Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix",

abstract = "Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.",

author = "Chunlei Yang and Xiaodong Cui and Shen, \{Shun Qing\} and Zhongying Xu and Weikun Ge",

year = "2009",

month = aug,

day = "6",

doi = "10.1103/PhysRevB.80.035313",

language = "English",

volume = "80",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

AU - Yang, Chunlei

AU - Cui, Xiaodong

AU - Shen, Shun Qing

AU - Xu, Zhongying

AU - Ge, Weikun

PY - 2009/8/6

Y1 - 2009/8/6

N2 - Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.

AB - Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000268617800085

UR - https://www.scopus.com/pages/publications/69549126464

U2 - 10.1103/PhysRevB.80.035313

DO - 10.1103/PhysRevB.80.035313

M3 - Journal Article

AN - SCOPUS:69549126464

SN - 1098-0121

VL - 80

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

M1 - 035313

ER -

Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

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