Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes

Yanan Sun; Weifeng He; Zhigang Mao; Hailong Jiao; Volkan Kursun

doi:10.23919/ELINFOCOM.2019.8706391

Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes

Yanan Sun
, Weifeng He
, Zhigang Mao
, Hailong Jiao
, Volkan Kursun

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

3 Citations (Scopus)

Abstract

A robust SRAM cell that can tolerate metallic carbon nanotubes is presented in this paper. A statistical yield model of carbon nanotube transistors and memory circuits is developed considering spatial correlations. The yield of the proposed process-imperfections-aware SRAM array is increased by more than twenty-one thousand times as compared to an alternative design that assumes perfect carbon nanotubes in a 16nm technology.

Original language	English
Title of host publication	ICEIC 2019 - International Conference on Electronics, Information, and Communication
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9788995004449
DOIs	https://doi.org/10.23919/ELINFOCOM.2019.8706391
Publication status	Published - 3 May 2019
Event	18th International Conference on Electronics, Information, and Communication, ICEIC 2019 - Auckland, New Zealand Duration: 22 Jan 2019 → 25 Jan 2019

Publication series

Name	ICEIC 2019 - International Conference on Electronics, Information, and Communication

Conference

Conference	18th International Conference on Electronics, Information, and Communication, ICEIC 2019
Country/Territory	New Zealand
City	Auckland
Period	22/01/19 → 25/01/19

Bibliographical note

Publisher Copyright:
© 2019 Institute of Electronics and Information Engineers (IEIE).

Access to Document

10.23919/ELINFOCOM.2019.8706391

Cite this

Sun, Y., He, W., Mao, Z., Jiao, H., & Kursun, V. (2019). Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes. In ICEIC 2019 - International Conference on Electronics, Information, and Communication Article 8706391 (ICEIC 2019 - International Conference on Electronics, Information, and Communication). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2019.8706391

Sun, Yanan ; He, Weifeng ; Mao, Zhigang et al. / Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes. ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc., 2019. (ICEIC 2019 - International Conference on Electronics, Information, and Communication).

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title = "Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes",

abstract = "A robust SRAM cell that can tolerate metallic carbon nanotubes is presented in this paper. A statistical yield model of carbon nanotube transistors and memory circuits is developed considering spatial correlations. The yield of the proposed process-imperfections-aware SRAM array is increased by more than twenty-one thousand times as compared to an alternative design that assumes perfect carbon nanotubes in a 16nm technology.",

author = "Yanan Sun and Weifeng He and Zhigang Mao and Hailong Jiao and Volkan Kursun",

note = "Publisher Copyright: {\textcopyright} 2019 Institute of Electronics and Information Engineers (IEIE).; 18th International Conference on Electronics, Information, and Communication, ICEIC 2019 ; Conference date: 22-01-2019 Through 25-01-2019",

year = "2019",

month = may,

day = "3",

doi = "10.23919/ELINFOCOM.2019.8706391",

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Sun, Y, He, W, Mao, Z, Jiao, H & Kursun, V 2019, Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes. in ICEIC 2019 - International Conference on Electronics, Information, and Communication., 8706391, ICEIC 2019 - International Conference on Electronics, Information, and Communication, Institute of Electrical and Electronics Engineers Inc., 18th International Conference on Electronics, Information, and Communication, ICEIC 2019, Auckland, New Zealand, 22/01/19. https://doi.org/10.23919/ELINFOCOM.2019.8706391

Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes. / Sun, Yanan; He, Weifeng; Mao, Zhigang et al.
ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc., 2019. 8706391 (ICEIC 2019 - International Conference on Electronics, Information, and Communication).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes

AU - Sun, Yanan

AU - He, Weifeng

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AU - Jiao, Hailong

AU - Kursun, Volkan

PY - 2019/5/3

Y1 - 2019/5/3

N2 - A robust SRAM cell that can tolerate metallic carbon nanotubes is presented in this paper. A statistical yield model of carbon nanotube transistors and memory circuits is developed considering spatial correlations. The yield of the proposed process-imperfections-aware SRAM array is increased by more than twenty-one thousand times as compared to an alternative design that assumes perfect carbon nanotubes in a 16nm technology.

AB - A robust SRAM cell that can tolerate metallic carbon nanotubes is presented in this paper. A statistical yield model of carbon nanotube transistors and memory circuits is developed considering spatial correlations. The yield of the proposed process-imperfections-aware SRAM array is increased by more than twenty-one thousand times as compared to an alternative design that assumes perfect carbon nanotubes in a 16nm technology.

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DO - 10.23919/ELINFOCOM.2019.8706391

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AN - SCOPUS:85065860483

T3 - ICEIC 2019 - International Conference on Electronics, Information, and Communication

BT - ICEIC 2019 - International Conference on Electronics, Information, and Communication

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th International Conference on Electronics, Information, and Communication, ICEIC 2019

Y2 - 22 January 2019 through 25 January 2019

ER -

Sun Y, He W, Mao Z, Jiao H, Kursun V. Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes. In ICEIC 2019 - International Conference on Electronics, Information, and Communication. Institute of Electrical and Electronics Engineers Inc. 2019. 8706391. (ICEIC 2019 - International Conference on Electronics, Information, and Communication). doi: 10.23919/ELINFOCOM.2019.8706391

Statistical modeling and design of a 16nm 9T SRAM cell considering post-synthesis removal of metallic carbon-nanotubes

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