Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation

Xiaoguang He; Yuxia Feng; Xuelin Yang; Shan Wu; Zidong Cai; Jia Wei; Jianfei Shen; Huayang Huang; Danshuo Liu; Zhenghao Chen; Cheng Ma; Weikun Ge; Bo Shen

doi:10.35848/1882-0786/ac3dc0

Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation

Xiaoguang He^*, Yuxia Feng^*, Xuelin Yang, Shan Wu, Zidong Cai, Jia Wei, Jianfei Shen, Huayang Huang, Danshuo Liu, Zhenghao Chen, Cheng Ma, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

12 Citations (Scopus)

Abstract

In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (R on) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic R on. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic R on degradation.

Original language	English
Article number	011001
Journal	Applied Physics Express
Volume	15
Issue number	1
DOIs	https://doi.org/10.35848/1882-0786/ac3dc0
Publication status	Published - Jan 2022
Externally published	Yes

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© 2021 The Japan Society of Applied Physics

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title = "Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation",

abstract = "In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (R on) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic R on. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic R on degradation.",

author = "Xiaoguang He and Yuxia Feng and Xuelin Yang and Shan Wu and Zidong Cai and Jia Wei and Jianfei Shen and Huayang Huang and Danshuo Liu and Zhenghao Chen and Cheng Ma and Weikun Ge and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2021 The Japan Society of Applied Physics",

year = "2022",

month = jan,

doi = "10.35848/1882-0786/ac3dc0",

language = "English",

volume = "15",

journal = "Applied Physics Express",

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TY - JOUR

T1 - Step-Graded AlGaN vs superlattice

T2 - role of strain relief layer in dynamic on-resistance degradation

AU - He, Xiaoguang

AU - Feng, Yuxia

AU - Yang, Xuelin

AU - Wu, Shan

AU - Cai, Zidong

AU - Wei, Jia

AU - Shen, Jianfei

AU - Huang, Huayang

AU - Liu, Danshuo

AU - Chen, Zhenghao

AU - Ma, Cheng

AU - Ge, Weikun

AU - Shen, Bo

PY - 2022/1

Y1 - 2022/1

N2 - In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (R on) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic R on. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic R on degradation.

AB - In this work, we study the impacts of different types of strain relief layer (SRL) on dynamic on-resistance (R on) degradation of GaN power devices on Si by back-gate ramping and vertical leakage measurement. Our study reveals that the SRL has important effects on the dynamic R on. Compared with step-graded AlGaN SRL, the superlattice SRL possesses much more energy barriers, which can more effectively block the leakage of holes from GaN buffer and the injection of electrons from Si substrate. Enhancing the carrier blocking ability of SRL could contribute to the suppression of dynamic R on degradation.

UR - https://www.scopus.com/pages/publications/85122751819

U2 - 10.35848/1882-0786/ac3dc0

DO - 10.35848/1882-0786/ac3dc0

M3 - Journal Article

AN - SCOPUS:85122751819

SN - 1882-0778

VL - 15

JO - Applied Physics Express

JF - Applied Physics Express

IS - 1

M1 - 011001

ER -

Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation

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