Strong circular photogalvanic effect in ZnO epitaxial films

Q. Zhang; X. Q. Wang; C. M. Yin; F. J. Xu; N. Tang; B. Shen; Y. H. Chen; K. Chang; W. K. Ge; Y. Ishitani; A. Yoshikawa

doi:10.1063/1.3467835

Strong circular photogalvanic effect in ZnO epitaxial films

Q. Zhang^*, X. Q. Wang, C. M. Yin, F. J. Xu, N. Tang, B. Shen, Y. H. Chen, K. Chang, W. K. Ge, Y. Ishitani, A. Yoshikawa

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

21 Citations (Scopus)

Abstract

We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

Original language	English
Article number	041907
Journal	Applied Physics Letters
Volume	97
Issue number	4
DOIs	https://doi.org/10.1063/1.3467835
Publication status	Published - 26 Jul 2010
Externally published	Yes

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title = "Strong circular photogalvanic effect in ZnO epitaxial films",

abstract = "We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.",

author = "Q. Zhang and Wang, \{X. Q.\} and Yin, \{C. M.\} and Xu, \{F. J.\} and N. Tang and B. Shen and Chen, \{Y. H.\} and K. Chang and Ge, \{W. K.\} and Y. Ishitani and A. Yoshikawa",

year = "2010",

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doi = "10.1063/1.3467835",

language = "English",

volume = "97",

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TY - JOUR

T1 - Strong circular photogalvanic effect in ZnO epitaxial films

AU - Zhang, Q.

AU - Wang, X. Q.

AU - Yin, C. M.

AU - Xu, F. J.

AU - Tang, N.

AU - Shen, B.

AU - Chen, Y. H.

AU - Chang, K.

AU - Ge, W. K.

AU - Ishitani, Y.

AU - Yoshikawa, A.

PY - 2010/7/26

Y1 - 2010/7/26

N2 - We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

AB - We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000281059200027

UR - https://www.scopus.com/pages/publications/77955752249

U2 - 10.1063/1.3467835

DO - 10.1063/1.3467835

M3 - Journal Article

AN - SCOPUS:77955752249

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041907

ER -

Strong circular photogalvanic effect in ZnO epitaxial films

Abstract

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