Study of local vibrational mode absorptions of a defect related to EL2 in SI-GaAs

Chunying Song; Weikun Ge; Desheng Jiang; Chenchia Xu

doi:10.1016/0022-2313(88)90234-7

Study of local vibrational mode absorptions of a defect related to EL2 in SI-GaAs

Chunying Song^*, Weikun Ge, Desheng Jiang, Chenchia Xu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

A pair of local vibrational mode infrared absorption bands were found in SI-GaAs materials and proved to be associated to the ground state and the metastable state of EL2 centers in SI-GaAs.

Original language	English
Pages (from-to)	363-364
Number of pages	2
Journal	Journal of Luminescence
Volume	40-41
Issue number	C
DOIs	https://doi.org/10.1016/0022-2313(88)90234-7
Publication status	Published - Feb 1988
Externally published	Yes

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10.1016/0022-2313(88)90234-7

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@article{65d999070d0d478791e3a4568da43306,

title = "Study of local vibrational mode absorptions of a defect related to EL2 in SI-GaAs",

abstract = "A pair of local vibrational mode infrared absorption bands were found in SI-GaAs materials and proved to be associated to the ground state and the metastable state of EL2 centers in SI-GaAs.",

author = "Chunying Song and Weikun Ge and Desheng Jiang and Chenchia Xu",

year = "1988",

month = feb,

doi = "10.1016/0022-2313(88)90234-7",

language = "English",

volume = "40-41",

pages = "363--364",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier B.V.",

number = "C",

}

TY - JOUR

T1 - Study of local vibrational mode absorptions of a defect related to EL2 in SI-GaAs

AU - Song, Chunying

AU - Ge, Weikun

AU - Jiang, Desheng

AU - Xu, Chenchia

PY - 1988/2

Y1 - 1988/2

N2 - A pair of local vibrational mode infrared absorption bands were found in SI-GaAs materials and proved to be associated to the ground state and the metastable state of EL2 centers in SI-GaAs.

AB - A pair of local vibrational mode infrared absorption bands were found in SI-GaAs materials and proved to be associated to the ground state and the metastable state of EL2 centers in SI-GaAs.

UR - https://www.scopus.com/pages/publications/0023290450

U2 - 10.1016/0022-2313(88)90234-7

DO - 10.1016/0022-2313(88)90234-7

M3 - Journal Article

AN - SCOPUS:0023290450

SN - 0022-2313

VL - 40-41

SP - 363

EP - 364

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - C

ER -

Study of local vibrational mode absorptions of a defect related to EL2 in SI-GaAs

Abstract

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