Study progess on FET-based Terahertz wave generation and detection

Jin He; Guoqing Hu; Zhiping Zhou; Guangjin Ma; Yandong He; Mansun Chan; Lei Song

doi:10.1109/ICSICT.2016.7998867

Study progess on FET-based Terahertz wave generation and detection

Jin He, Guoqing Hu, Zhiping Zhou, Guangjin Ma, Yandong He, Mansun Chan, Lei Song

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based THZ generation and detecting mechanism, simulation tool, compact modeling, size effect, energy band engineering, so to develop the FET-based THZ device physics theory, provide the new simulation tool, build an efficient compact model. The work deliverables will help device scientists and circuit designers deeply understand the pontential and function of the silicon-based FET application in the THZ field, know how to realize the optimized device performance from the fine processing technology and structure design.

Original language	English
Title of host publication	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
Editors	Ru Huang, Ting-Ao Tang, Yu-Long Jiang
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	161-164
Number of pages	4
ISBN (Electronic)	9781467397179
DOIs	https://doi.org/10.1109/ICSICT.2016.7998867
Publication status	Published - 2016
Event	13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China Duration: 25 Oct 2016 → 28 Oct 2016

Publication series

Name	2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Conference

Conference	13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
Country/Territory	China
City	Hangzhou
Period	25/10/16 → 28/10/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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10.1109/ICSICT.2016.7998867

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He, J., Hu, G., Zhou, Z., Ma, G., He, Y., Chan, M., & Song, L. (2016). Study progess on FET-based Terahertz wave generation and detection. In R. Huang, T.-A. Tang, & Y.-L. Jiang (Eds.), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings (pp. 161-164). Article 7998867 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2016.7998867

He, Jin ; Hu, Guoqing ; Zhou, Zhiping et al. / Study progess on FET-based Terahertz wave generation and detection. 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. editor / Ru Huang ; Ting-Ao Tang ; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 161-164 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

@inproceedings{250c52673f4b4b648d1905d412c2bd00,

title = "Study progess on FET-based Terahertz wave generation and detection",

abstract = "Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based THZ generation and detecting mechanism, simulation tool, compact modeling, size effect, energy band engineering, so to develop the FET-based THZ device physics theory, provide the new simulation tool, build an efficient compact model. The work deliverables will help device scientists and circuit designers deeply understand the pontential and function of the silicon-based FET application in the THZ field, know how to realize the optimized device performance from the fine processing technology and structure design.",

author = "Jin He and Guoqing Hu and Zhiping Zhou and Guangjin Ma and Yandong He and Mansun Chan and Lei Song",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",

year = "2016",

doi = "10.1109/ICSICT.2016.7998867",

language = "English",

series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "161--164",

editor = "Ru Huang and Ting-Ao Tang and Yu-Long Jiang",

booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",

}

He, J, Hu, G, Zhou, Z, Ma, G, He, Y, Chan, M & Song, L 2016, Study progess on FET-based Terahertz wave generation and detection. in R Huang, T-A Tang & Y-L Jiang (eds), 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings., 7998867, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 161-164, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, Hangzhou, China, 25/10/16. https://doi.org/10.1109/ICSICT.2016.7998867

Study progess on FET-based Terahertz wave generation and detection. / He, Jin; Hu, Guoqing; Zhou, Zhiping et al.
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. ed. / Ru Huang; Ting-Ao Tang; Yu-Long Jiang. Institute of Electrical and Electronics Engineers Inc., 2016. p. 161-164 7998867 (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Study progess on FET-based Terahertz wave generation and detection

AU - He, Jin

AU - Hu, Guoqing

AU - Zhou, Zhiping

AU - Ma, Guangjin

AU - He, Yandong

AU - Chan, Mansun

AU - Song, Lei

PY - 2016

Y1 - 2016

N2 - Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based THZ generation and detecting mechanism, simulation tool, compact modeling, size effect, energy band engineering, so to develop the FET-based THZ device physics theory, provide the new simulation tool, build an efficient compact model. The work deliverables will help device scientists and circuit designers deeply understand the pontential and function of the silicon-based FET application in the THZ field, know how to realize the optimized device performance from the fine processing technology and structure design.

AB - Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based THZ generation and detecting mechanism, simulation tool, compact modeling, size effect, energy band engineering, so to develop the FET-based THZ device physics theory, provide the new simulation tool, build an efficient compact model. The work deliverables will help device scientists and circuit designers deeply understand the pontential and function of the silicon-based FET application in the THZ field, know how to realize the optimized device performance from the fine processing technology and structure design.

UR - https://openalex.org/W2744608726

UR - https://www.scopus.com/pages/publications/85028687671

U2 - 10.1109/ICSICT.2016.7998867

DO - 10.1109/ICSICT.2016.7998867

M3 - Conference Paper published in a book

T3 - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

SP - 161

EP - 164

BT - 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

A2 - Huang, Ru

A2 - Tang, Ting-Ao

A2 - Jiang, Yu-Long

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016

Y2 - 25 October 2016 through 28 October 2016

ER -

He J, Hu G, Zhou Z, Ma G, He Y, Chan M et al. Study progess on FET-based Terahertz wave generation and detection. In Huang R, Tang TA, Jiang YL, editors, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 161-164. 7998867. (2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings). doi: 10.1109/ICSICT.2016.7998867

Study progess on FET-based Terahertz wave generation and detection

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