Symmetry realization of BSIM model with dynamic reference method for circuit simulation

Xuemei Xi; Kanyu Cao; Jin He; Hui Wan; Mansun Chan; Chenming Hu

doi:10.1109/DRC.2002.1029514

Symmetry realization of BSIM model with dynamic reference method for circuit simulation

Xuemei Xi, Kanyu Cao, Jin He, Hui Wan, Mansun Chan, Chenming Hu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

1 Citation (Scopus)

Abstract

The dynamic reference method is implemented in BSIM4 to realize both continuity and symmetry under the source referencing MOSFET model framework. The method achieves accurate results at a much faster speed compared with other body-referencing and surface potential based approaches.

Original language	English
Title of host publication	60th Device Research Conference, DRC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	65-66
Number of pages	2
ISBN (Electronic)	0780373170
DOIs	https://doi.org/10.1109/DRC.2002.1029514
Publication status	Published - 2002
Externally published	Yes
Event	60th Device Research Conference, DRC 2002 - Santa Barbara, United States Duration: 24 Jun 2002 → 26 Jun 2002

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2002-January
ISSN (Print)	1548-3770

Conference

Conference	60th Device Research Conference, DRC 2002
Country/Territory	United States
City	Santa Barbara
Period	24/06/02 → 26/06/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

Circuit simulation
Circuit testing
Equations
Forward contracts
MOS devices
MOSFET circuits
Mathematical model
Resistors
Virtual manufacturing
Voltage

Access to Document

10.1109/DRC.2002.1029514

Cite this

Xi, X., Cao, K., He, J., Wan, H., Chan, M., & Hu, C. (2002). Symmetry realization of BSIM model with dynamic reference method for circuit simulation. In 60th Device Research Conference, DRC 2002 (pp. 65-66). Article 1029514 (Device Research Conference - Conference Digest, DRC; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2002.1029514

@inproceedings{c0a6aaaee4dd4100bd66cb214e9d8cdb,

title = "Symmetry realization of BSIM model with dynamic reference method for circuit simulation",

abstract = "The dynamic reference method is implemented in BSIM4 to realize both continuity and symmetry under the source referencing MOSFET model framework. The method achieves accurate results at a much faster speed compared with other body-referencing and surface potential based approaches.",

keywords = "Circuit simulation, Circuit testing, Equations, Forward contracts, MOS devices, MOSFET circuits, Mathematical model, Resistors, Virtual manufacturing, Voltage",

author = "Xuemei Xi and Kanyu Cao and Jin He and Hui Wan and Mansun Chan and Chenming Hu",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 60th Device Research Conference, DRC 2002 ; Conference date: 24-06-2002 Through 26-06-2002",

year = "2002",

doi = "10.1109/DRC.2002.1029514",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "65--66",

booktitle = "60th Device Research Conference, DRC 2002",

}

Xi, X, Cao, K, He, J, Wan, H, Chan, M & Hu, C 2002, Symmetry realization of BSIM model with dynamic reference method for circuit simulation. in 60th Device Research Conference, DRC 2002., 1029514, Device Research Conference - Conference Digest, DRC, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 65-66, 60th Device Research Conference, DRC 2002, Santa Barbara, United States, 24/06/02. https://doi.org/10.1109/DRC.2002.1029514

Symmetry realization of BSIM model with dynamic reference method for circuit simulation. / Xi, Xuemei; Cao, Kanyu; He, Jin et al.
60th Device Research Conference, DRC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 65-66 1029514 (Device Research Conference - Conference Digest, DRC; Vol. 2002-January).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

TY - GEN

T1 - Symmetry realization of BSIM model with dynamic reference method for circuit simulation

AU - Xi, Xuemei

AU - Cao, Kanyu

AU - He, Jin

AU - Wan, Hui

AU - Chan, Mansun

AU - Hu, Chenming

PY - 2002

Y1 - 2002

N2 - The dynamic reference method is implemented in BSIM4 to realize both continuity and symmetry under the source referencing MOSFET model framework. The method achieves accurate results at a much faster speed compared with other body-referencing and surface potential based approaches.

AB - The dynamic reference method is implemented in BSIM4 to realize both continuity and symmetry under the source referencing MOSFET model framework. The method achieves accurate results at a much faster speed compared with other body-referencing and surface potential based approaches.

KW - Circuit simulation

KW - Circuit testing

KW - Equations

KW - Forward contracts

KW - MOS devices

KW - MOSFET circuits

KW - Mathematical model

KW - Resistors

KW - Virtual manufacturing

KW - Voltage

UR - https://openalex.org/W2132572380

UR - https://www.scopus.com/pages/publications/84948652376

U2 - 10.1109/DRC.2002.1029514

DO - 10.1109/DRC.2002.1029514

M3 - Conference Paper published in a book

T3 - Device Research Conference - Conference Digest, DRC

SP - 65

EP - 66

BT - 60th Device Research Conference, DRC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 60th Device Research Conference, DRC 2002

Y2 - 24 June 2002 through 26 June 2002

ER -

Symmetry realization of BSIM model with dynamic reference method for circuit simulation

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Cite this