Abstract
Thin films and nanowires based on an organometallic material Ag-TCNQ were prepared. Electrical properties of Ag-TCNQ thin film were investigated at the nanoscale using a scanning tunneling microscope and electrical memory effect was observed. Nanodevices based on Ag-TCNQ nanowire were fabricated using electron beam lithography technique. Their I-V characteristics show similar electrical memory effect as the thin film but with much higher switching voltage threshold and resistance change ratio. Ag-TCNQ nanowires hold high potential for ultra-high density information storage and switching devices.
| Original language | English |
|---|---|
| Pages (from-to) | 72-75 |
| Number of pages | 4 |
| Journal | Reviews on Advanced Materials Science |
| Volume | 5 |
| Issue number | 1 |
| Publication status | Published - Oct 2003 |
| Externally published | Yes |
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