Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells

Wei Xia; Hao Lin; Hsiang Ning Wu; Ching W. Tang; Irfan Irfan; Chenggong Wang; Yongli Gao

doi:10.1016/j.solmat.2014.06.010

Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells

Wei Xia, Hao Lin, Hsiang Ning Wu, Ching W. Tang^*, Irfan Irfan, Chenggong Wang, Yongli Gao

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

31 Citations (Scopus)

Abstract

A buffer layer based on a Te/Cu bi-layer useful for forming ohmic contact to p-CdTe has been developed for application in CdS/CdTe solar cells. The bi-layer buffer was prepared by vapor deposition and a thermal annealing (~200 °C) was required for activation. Enhanced efficiency and stability were obtained by optimizing the Cu/Te compositions and the thermal activation conditions. Characterization by XRD, XPS, and PL indicates that under the thermal activation conditions Cu diffuses rapidly in the Te without forming Cu_xTe compounds. The enhanced stability can be attributed to the mediation of Cu diffusion into CdTe by the Te layer. The Te/Cu buffers are particularly useful for the fabrication of ultra-thin CdS/CdTe solar cells.

Original language	English
Pages (from-to)	411-420
Number of pages	10
Journal	Solar Energy Materials and Solar Cells
Volume	128
DOIs	https://doi.org/10.1016/j.solmat.2014.06.010
Publication status	Published - Sept 2014
Externally published	Yes

Keywords

Back contact
CdTe
Copper
Solar cell
Stability
Tellurium

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2014.06.010

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@article{d038f79568b7425c89cd647d98177eb1,

title = "Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells",

abstract = "A buffer layer based on a Te/Cu bi-layer useful for forming ohmic contact to p-CdTe has been developed for application in CdS/CdTe solar cells. The bi-layer buffer was prepared by vapor deposition and a thermal annealing (\textasciitilde{}200 °C) was required for activation. Enhanced efficiency and stability were obtained by optimizing the Cu/Te compositions and the thermal activation conditions. Characterization by XRD, XPS, and PL indicates that under the thermal activation conditions Cu diffuses rapidly in the Te without forming CuxTe compounds. The enhanced stability can be attributed to the mediation of Cu diffusion into CdTe by the Te layer. The Te/Cu buffers are particularly useful for the fabrication of ultra-thin CdS/CdTe solar cells.",

keywords = "Back contact, CdTe, Copper, Solar cell, Stability, Tellurium",

author = "Wei Xia and Hao Lin and Wu, \{Hsiang Ning\} and Tang, \{Ching W.\} and Irfan Irfan and Chenggong Wang and Yongli Gao",

year = "2014",

month = sep,

doi = "10.1016/j.solmat.2014.06.010",

language = "English",

volume = "128",

pages = "411--420",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Te/Cu bi-layer

T2 - A low-resistance back contact buffer for thin film CdS/CdTe solar cells

AU - Xia, Wei

AU - Lin, Hao

AU - Wu, Hsiang Ning

AU - Tang, Ching W.

AU - Irfan, Irfan

AU - Wang, Chenggong

AU - Gao, Yongli

PY - 2014/9

Y1 - 2014/9

N2 - A buffer layer based on a Te/Cu bi-layer useful for forming ohmic contact to p-CdTe has been developed for application in CdS/CdTe solar cells. The bi-layer buffer was prepared by vapor deposition and a thermal annealing (~200 °C) was required for activation. Enhanced efficiency and stability were obtained by optimizing the Cu/Te compositions and the thermal activation conditions. Characterization by XRD, XPS, and PL indicates that under the thermal activation conditions Cu diffuses rapidly in the Te without forming CuxTe compounds. The enhanced stability can be attributed to the mediation of Cu diffusion into CdTe by the Te layer. The Te/Cu buffers are particularly useful for the fabrication of ultra-thin CdS/CdTe solar cells.

AB - A buffer layer based on a Te/Cu bi-layer useful for forming ohmic contact to p-CdTe has been developed for application in CdS/CdTe solar cells. The bi-layer buffer was prepared by vapor deposition and a thermal annealing (~200 °C) was required for activation. Enhanced efficiency and stability were obtained by optimizing the Cu/Te compositions and the thermal activation conditions. Characterization by XRD, XPS, and PL indicates that under the thermal activation conditions Cu diffuses rapidly in the Te without forming CuxTe compounds. The enhanced stability can be attributed to the mediation of Cu diffusion into CdTe by the Te layer. The Te/Cu buffers are particularly useful for the fabrication of ultra-thin CdS/CdTe solar cells.

KW - Back contact

KW - CdTe

KW - Copper

KW - Solar cell

KW - Stability

KW - Tellurium

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000340300500056

UR - https://openalex.org/W2058238724

UR - https://www.scopus.com/pages/publications/84903643158

U2 - 10.1016/j.solmat.2014.06.010

DO - 10.1016/j.solmat.2014.06.010

M3 - Journal Article

SN - 0927-0248

VL - 128

SP - 411

EP - 420

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells

Abstract

Keywords

UN SDGs

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