TY - JOUR
T1 - Temperature effects on MOSFET driving capability and voltage gain
AU - Chen, K.
AU - Huang, J. H.
AU - Ma, J. Z.
AU - Liu, Z. H.
AU - Jeng, M. C.
AU - Ko, P. K.
AU - Hu, C.
PY - 1996/5
Y1 - 1996/5
N2 - This paper attempts to discuss some important temperature effects on MOSFET analogue applications. For this purpose, measurement data taken over wide ranges of temperature (91 400 K) and channel length (0.35-50 μm) on MOSFET driving capability, output resistance, and voltage gain are presented. It is shown that low temperature has greater benefit on current driving capability for analogue devices which have longer L and lower Vg values than digital ones. For constant voltage (Vg - Vl) bias, output resistance and voltage gain drop at low temperatures. However, under the constant current Ids bias, considerably higher gain can be achieved at low temperatures.
AB - This paper attempts to discuss some important temperature effects on MOSFET analogue applications. For this purpose, measurement data taken over wide ranges of temperature (91 400 K) and channel length (0.35-50 μm) on MOSFET driving capability, output resistance, and voltage gain are presented. It is shown that low temperature has greater benefit on current driving capability for analogue devices which have longer L and lower Vg values than digital ones. For constant voltage (Vg - Vl) bias, output resistance and voltage gain drop at low temperatures. However, under the constant current Ids bias, considerably higher gain can be achieved at low temperatures.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1996UE25100013
UR - https://www.scopus.com/pages/publications/0030150825
U2 - 10.1016/0038-1101(95)00197-2
DO - 10.1016/0038-1101(95)00197-2
M3 - Journal Article
AN - SCOPUS:0030150825
SN - 0038-1101
VL - 39
SP - 699
EP - 701
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 5
ER -