TY - JOUR
T1 - The current-induced heat generation in a quantum dot with Andreev-Fano resonance
AU - Jiang, Feng
AU - Yan, Yonghong
AU - Wang, Shikuan
AU - Yan, Yijing
N1 - Publisher Copyright:
© 2019 Author(s).
PY - 2019/11/21
Y1 - 2019/11/21
N2 - Triggered by the motivation of conquering the heat bottleneck facing nanoelectronics, we studied the current-induced heat generation in a quantum dot (QD) with the Andreev-Fano (AF) resonance. In the strong electron-phonon interaction regime, the formula of steady heat generation is extended by Nambu representation of nonequilibrium Green's functions. The numerical results demonstrate that for the Normal metal-[Insulator (I), QD]-Superconductor ring, (i) the exact phase locking property of current is destroyed, so is that of heat generation; (ii) the AF resonance with phonon emission plays a vital role in the heating at both T = 0 K and T > - > 0 K; and (iii) the modulation to the heat generation by the magnetic flux acts in a variety of ways for the different effective dot level at the different temperature. We conclude that at both T = 0 K and T > - > 0 K, when the effective dot level is aligned to the Fermi level of the superconducting electrode, the performance of the device becomes optimal.
AB - Triggered by the motivation of conquering the heat bottleneck facing nanoelectronics, we studied the current-induced heat generation in a quantum dot (QD) with the Andreev-Fano (AF) resonance. In the strong electron-phonon interaction regime, the formula of steady heat generation is extended by Nambu representation of nonequilibrium Green's functions. The numerical results demonstrate that for the Normal metal-[Insulator (I), QD]-Superconductor ring, (i) the exact phase locking property of current is destroyed, so is that of heat generation; (ii) the AF resonance with phonon emission plays a vital role in the heating at both T = 0 K and T > - > 0 K; and (iii) the modulation to the heat generation by the magnetic flux acts in a variety of ways for the different effective dot level at the different temperature. We conclude that at both T = 0 K and T > - > 0 K, when the effective dot level is aligned to the Fermi level of the superconducting electrode, the performance of the device becomes optimal.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000504091700020
UR - https://www.scopus.com/pages/publications/85075344752
U2 - 10.1063/1.5126720
DO - 10.1063/1.5126720
M3 - Journal Article
SN - 0021-8979
VL - 126
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 19
M1 - 195101
ER -