The doping of mercury cadmium telluride grown by molecular-beam epitaxy

M. Boukerche; P. S. Wijewarnasuriya; S. Sivananthan; I. K. Sou; Y. J. Kim; K. K. Mahavadi; J. P. Faurie

doi:10.1116/1.575610

The doping of mercury cadmium telluride grown by molecular-beam epitaxy

M. Boukerche
, P. S. Wijewarnasuriya
, S. Sivananthan
, I. K. Sou
, Y. J. Kim
, K. K. Mahavadi
, J. P. Faurie

Research output: Contribution to journal › Journal Article › peer-review

53 Citations (Scopus)

Abstract

The electrical properties of the mercury cadmium telluride semiconductor material grown by the molecular-beam epitaxy are reviewed. The doping effects linked to the growth conditions, as well as the influence of indium or lithium incorporation are discussed. The results on doping by silicon, arsenic, and antimony are presented. It will be shown that all the impurities studied interact primarily with the metal site. It will confirm that the growth occurs under very rich tellurium conditions.

Original language	English
Pages (from-to)	2830-2833
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	6
Issue number	4
DOIs	https://doi.org/10.1116/1.575610
Publication status	Published - Jul 1988
Externally published	Yes

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title = "The doping of mercury cadmium telluride grown by molecular-beam epitaxy",

abstract = "The electrical properties of the mercury cadmium telluride semiconductor material grown by the molecular-beam epitaxy are reviewed. The doping effects linked to the growth conditions, as well as the influence of indium or lithium incorporation are discussed. The results on doping by silicon, arsenic, and antimony are presented. It will be shown that all the impurities studied interact primarily with the metal site. It will confirm that the growth occurs under very rich tellurium conditions.",

author = "M. Boukerche and Wijewarnasuriya, \{P. S.\} and S. Sivananthan and Sou, \{I. K.\} and Kim, \{Y. J.\} and Mahavadi, \{K. K.\} and Faurie, \{J. P.\}",

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AU - Boukerche, M.

AU - Wijewarnasuriya, P. S.

AU - Sivananthan, S.

AU - Sou, I. K.

AU - Kim, Y. J.

AU - Mahavadi, K. K.

AU - Faurie, J. P.

PY - 1988/7

Y1 - 1988/7

N2 - The electrical properties of the mercury cadmium telluride semiconductor material grown by the molecular-beam epitaxy are reviewed. The doping effects linked to the growth conditions, as well as the influence of indium or lithium incorporation are discussed. The results on doping by silicon, arsenic, and antimony are presented. It will be shown that all the impurities studied interact primarily with the metal site. It will confirm that the growth occurs under very rich tellurium conditions.

AB - The electrical properties of the mercury cadmium telluride semiconductor material grown by the molecular-beam epitaxy are reviewed. The doping effects linked to the growth conditions, as well as the influence of indium or lithium incorporation are discussed. The results on doping by silicon, arsenic, and antimony are presented. It will be shown that all the impurities studied interact primarily with the metal site. It will confirm that the growth occurs under very rich tellurium conditions.

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UR - https://openalex.org/W2142323463

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DO - 10.1116/1.575610

M3 - Journal Article

SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

The doping of mercury cadmium telluride grown by molecular-beam epitaxy

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