The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

Zhonghe Jin; Keith Moulding; Hoi S. Kwok; Man Wong

doi:10.1109/16.737444

The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

Zhonghe Jin^*, Keith Moulding, Hoi S. Kwok, Man Wong

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

55 Citations (Scopus)

Abstract

The effects of extended heat treatment on the rate of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were investigated. Orientation image microscopy and transmission electron microscopy were employed to reveal the crystallinity of the thin film and to measure the MILC length. It was found that for circular Ni disc patterns, the radial dimensions of the resulting MILC rings increased with the radii of the Ni discs. The longest MILC lengths were obtained from straight-edged Ni patterns, which effectively had infinite radii of curvature. The MILC rate decreased upon extended heat treatment. One reason is the continuously changing state of the a-Si during the treatment. An additional reason could be the diminishing supply of Ni from the Ni covered area. The contribution of both to the reduction of the MILC rate is discussed.

Original language	English
Pages (from-to)	78-82
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	1
DOIs	https://doi.org/10.1109/16.737444
Publication status	Published - 1999

Keywords

Lateral crystallization
Low-temperature
Nickel
Thin film transistors

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10.1109/16.737444

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title = "The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films",

abstract = "The effects of extended heat treatment on the rate of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were investigated. Orientation image microscopy and transmission electron microscopy were employed to reveal the crystallinity of the thin film and to measure the MILC length. It was found that for circular Ni disc patterns, the radial dimensions of the resulting MILC rings increased with the radii of the Ni discs. The longest MILC lengths were obtained from straight-edged Ni patterns, which effectively had infinite radii of curvature. The MILC rate decreased upon extended heat treatment. One reason is the continuously changing state of the a-Si during the treatment. An additional reason could be the diminishing supply of Ni from the Ni covered area. The contribution of both to the reduction of the MILC rate is discussed.",

keywords = "Lateral crystallization, Low-temperature, Nickel, Thin film transistors",

author = "Zhonghe Jin and Keith Moulding and Kwok, \{Hoi S.\} and Man Wong",

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journal = "IEEE Transactions on Electron Devices",

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TY - JOUR

T1 - The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

AU - Jin, Zhonghe

AU - Moulding, Keith

AU - Kwok, Hoi S.

AU - Wong, Man

PY - 1999

Y1 - 1999

N2 - The effects of extended heat treatment on the rate of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were investigated. Orientation image microscopy and transmission electron microscopy were employed to reveal the crystallinity of the thin film and to measure the MILC length. It was found that for circular Ni disc patterns, the radial dimensions of the resulting MILC rings increased with the radii of the Ni discs. The longest MILC lengths were obtained from straight-edged Ni patterns, which effectively had infinite radii of curvature. The MILC rate decreased upon extended heat treatment. One reason is the continuously changing state of the a-Si during the treatment. An additional reason could be the diminishing supply of Ni from the Ni covered area. The contribution of both to the reduction of the MILC rate is discussed.

AB - The effects of extended heat treatment on the rate of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were investigated. Orientation image microscopy and transmission electron microscopy were employed to reveal the crystallinity of the thin film and to measure the MILC length. It was found that for circular Ni disc patterns, the radial dimensions of the resulting MILC rings increased with the radii of the Ni discs. The longest MILC lengths were obtained from straight-edged Ni patterns, which effectively had infinite radii of curvature. The MILC rate decreased upon extended heat treatment. One reason is the continuously changing state of the a-Si during the treatment. An additional reason could be the diminishing supply of Ni from the Ni covered area. The contribution of both to the reduction of the MILC rate is discussed.

KW - Lateral crystallization

KW - Low-temperature

KW - Nickel

KW - Thin film transistors

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U2 - 10.1109/16.737444

DO - 10.1109/16.737444

M3 - Journal Article

SN - 0018-9383

VL - 46

SP - 78

EP - 82

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films

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