The effects of furnace N2O annealing on MOSFETs

Z. H. Liu; J. T. Krick; H. J. Wann; P. K. Ko; C. Hu; Y. C. Cheng

doi:10.1109/IEDM.1992.307438

The effects of furnace N₂O annealing on MOSFETs

Z. H. Liu, J. T. Krick, H. J. Wann, P. K. Ko, C. Hu, Y. C. Cheng

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

26 Citations (Scopus)

Abstract

MOSFETs with 70-110 AA thick furnace N₂O-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N₂O anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	625-628
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307438
Publication status	Published - 1992
Externally published	Yes
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 13 Dec 1992 → 16 Dec 1992

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	13/12/92 → 16/12/92

Bibliographical note

Publisher Copyright:
© 1992 IEEE.

Access to Document

10.1109/IEDM.1992.307438

Cite this

Liu, Z. H., Krick, J. T., Wann, H. J., Ko, P. K., Hu, C., & Cheng, Y. C. (1992). The effects of furnace N₂O annealing on MOSFETs. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 625-628). Article 307438 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307438

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title = "The effects of furnace N2O annealing on MOSFETs",

abstract = "MOSFETs with 70-110 AA thick furnace N2O-annealed gate oxides are examined at both room and liquid nitrogen temperatures. The N2O anneal not only improves device performance, e.g. by increasing the high normal field mobility and current drivability, but it also suppresses degradation induced by Fowler-Nordheim and channel hot-carrier injection. Random telegraph noise measurements reveal a possible correlation between the interface properties and the mobility.",

author = "Liu, \{Z. H.\} and Krick, \{J. T.\} and Wann, \{H. J.\} and Ko, \{P. K.\} and C. Hu and Cheng, \{Y. C.\}",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",

year = "1992",

doi = "10.1109/IEDM.1992.307438",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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pages = "625--628",

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Liu, ZH, Krick, JT, Wann, HJ, Ko, PK, Hu, C & Cheng, YC 1992, The effects of furnace N₂O annealing on MOSFETs. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307438, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 625-628, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 13/12/92. https://doi.org/10.1109/IEDM.1992.307438

The effects of furnace N₂O annealing on MOSFETs. / Liu, Z. H.; Krick, J. T.; Wann, H. J. et al.
1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 625-628 307438 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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