The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling

Jian Chen; Fariborz Assaderaghi; Ping Keung Ko; Chenming Hu

doi:10.1109/SOI.1992.664806

The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling

Jian Chen, Fariborz Assaderaghi, Ping Keung Ko, Chenming Hu

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Original language	English
Title of host publication	1992 IEEE International SOI Conference, SOI 1992 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	84-85
Number of pages	2
ISBN (Electronic)	0780307763
DOIs	https://doi.org/10.1109/SOI.1992.664806
Publication status	Published - 1992
Externally published	Yes
Event	1992 IEEE International SOI Conference, SOI 1992 - Ponte Vedra Beach, United States Duration: 6 Oct 1992 → 8 Oct 1992

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	1992 IEEE International SOI Conference, SOI 1992
Country/Territory	United States
City	Ponte Vedra Beach
Period	6/10/92 → 8/10/92

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10.1109/SOI.1992.664806

Cite this

Chen, J., Assaderaghi, F., Ko, P. K., & Hu, C. (1992). The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings (pp. 84-85). Article 664806 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.1992.664806

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title = "The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling",

author = "Jian Chen and Fariborz Assaderaghi and Ko, \{Ping Keung\} and Chenming Hu",

year = "1992",

doi = "10.1109/SOI.1992.664806",

language = "English",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "84--85",

booktitle = "1992 IEEE International SOI Conference, SOI 1992 - Proceedings",

note = "1992 IEEE International SOI Conference, SOI 1992 ; Conference date: 06-10-1992 Through 08-10-1992",

}

Chen, J, Assaderaghi, F, Ko, PK & Hu, C 1992, The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling. in 1992 IEEE International SOI Conference, SOI 1992 - Proceedings., 664806, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 84-85, 1992 IEEE International SOI Conference, SOI 1992, Ponte Vedra Beach, United States, 6/10/92. https://doi.org/10.1109/SOI.1992.664806

The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling. / Chen, Jian; Assaderaghi, Fariborz; Ko, Ping Keung et al.
1992 IEEE International SOI Conference, SOI 1992 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 1992. p. 84-85 664806 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling

AU - Chen, Jian

AU - Assaderaghi, Fariborz

AU - Ko, Ping Keung

AU - Hu, Chenming

PY - 1992

Y1 - 1992

UR - https://www.scopus.com/pages/publications/3042617033

U2 - 10.1109/SOI.1992.664806

DO - 10.1109/SOI.1992.664806

M3 - Conference Paper published in a book

AN - SCOPUS:3042617033

T3 - Proceedings - IEEE International SOI Conference

SP - 84

EP - 85

BT - 1992 IEEE International SOI Conference, SOI 1992 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1992 IEEE International SOI Conference, SOI 1992

Y2 - 6 October 1992 through 8 October 1992

ER -

Chen J, Assaderaghi F, Ko PK, Hu C. The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling. In 1992 IEEE International SOI Conference, SOI 1992 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 1992. p. 84-85. 664806. (Proceedings - IEEE International SOI Conference). doi: 10.1109/SOI.1992.664806

The enhancement of gate-induced-drain-leakage (GIDL) current in SOI MOSFET and its impact on SOI device scaling

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