The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor

Wai Kit Ricky LEE; Tsz Yin MAN; Philip K.T. Mok; Ping K. Ko; Mansun Chan

doi:10.1016/j.sse.2003.07.002

The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor

Wai Kit Ricky LEE^*
, Tsz Yin MAN
, Philip K.T. Mok
, Ping K. Ko
, Mansun Chan

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

This paper describes the impact of the distributed RC effect in the intrinsic base region on the modeling of the output noise spectral density of a bipolar junction transistor. Simplified expressions to convert the distributed noise models to an improved hybrid-π model with the new equivalent noise sources are proposed. The accuracy of the new model has been verified by circuit simulations. Based on the new model, a noise analysis is done. The simulation results are compared with one by the conventional model. From this, the sensitivity of the noise parameters to the distributed RC effect is studied.

Original language	English
Pages (from-to)	297-308
Number of pages	12
Journal	Solid-State Electronics
Volume	48
Issue number	2
Early online date	24 Sept 2003
DOIs	https://doi.org/10.1016/j.sse.2003.07.002
Publication status	Published - Feb 2004

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@article{72b2db2bf03940f58ccce8537d34aa7c,

title = "The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor",

abstract = "This paper describes the impact of the distributed RC effect in the intrinsic base region on the modeling of the output noise spectral density of a bipolar junction transistor. Simplified expressions to convert the distributed noise models to an improved hybrid-π model with the new equivalent noise sources are proposed. The accuracy of the new model has been verified by circuit simulations. Based on the new model, a noise analysis is done. The simulation results are compared with one by the conventional model. From this, the sensitivity of the noise parameters to the distributed RC effect is studied.",

author = "LEE, \{Wai Kit Ricky\} and MAN, \{Tsz Yin\} and Mok, \{Philip K.T.\} and Ko, \{Ping K.\} and Mansun Chan",

year = "2004",

month = feb,

doi = "10.1016/j.sse.2003.07.002",

language = "English",

volume = "48",

pages = "297--308",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor

AU - LEE, Wai Kit Ricky

AU - MAN, Tsz Yin

AU - Mok, Philip K.T.

AU - Ko, Ping K.

AU - Chan, Mansun

PY - 2004/2

Y1 - 2004/2

N2 - This paper describes the impact of the distributed RC effect in the intrinsic base region on the modeling of the output noise spectral density of a bipolar junction transistor. Simplified expressions to convert the distributed noise models to an improved hybrid-π model with the new equivalent noise sources are proposed. The accuracy of the new model has been verified by circuit simulations. Based on the new model, a noise analysis is done. The simulation results are compared with one by the conventional model. From this, the sensitivity of the noise parameters to the distributed RC effect is studied.

AB - This paper describes the impact of the distributed RC effect in the intrinsic base region on the modeling of the output noise spectral density of a bipolar junction transistor. Simplified expressions to convert the distributed noise models to an improved hybrid-π model with the new equivalent noise sources are proposed. The accuracy of the new model has been verified by circuit simulations. Based on the new model, a noise analysis is done. The simulation results are compared with one by the conventional model. From this, the sensitivity of the noise parameters to the distributed RC effect is studied.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:000187361200014

UR - https://openalex.org/W2131920161

U2 - 10.1016/j.sse.2003.07.002

DO - 10.1016/j.sse.2003.07.002

M3 - Journal Article

SN - 0038-1101

VL - 48

SP - 297

EP - 308

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor

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