The interaction of radiation defects and pd-related centers in silicon

Zhou Jie; Ruan Shengvang; Hao Hong; G. E. Weikun; J. I. Xiujiang; L. I. Shuying

doi:10.1088/0256-307X/3/1/002

The interaction of radiation defects and pd-related centers in silicon

Zhou Jie, Ruan Shengvang, Hao Hong, G. E. Weikun, J. I. Xiujiang, L. I. Shuying

Research output: Contribution to journal › Letter › peer-review

7 Citations (Scopus)

Abstract

The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.

Original language	English
Pages (from-to)	5-8
Number of pages	4
Journal	Chinese Physics Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1088/0256-307X/3/1/002
Publication status	Published - Jan 1986
Externally published	Yes

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title = "The interaction of radiation defects and pd-related centers in silicon",

abstract = "The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.",

author = "Zhou Jie and Ruan Shengvang and Hao Hong and Weikun, \{G. E.\} and Xiujiang, \{J. I.\} and Shuying, \{L. I.\}",

year = "1986",

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AU - Jie, Zhou

AU - Shengvang, Ruan

AU - Hong, Hao

AU - Weikun, G. E.

AU - Xiujiang, J. I.

AU - Shuying, L. I.

PY - 1986/1

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N2 - The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.

AB - The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.

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The interaction of radiation defects and pd-related centers in silicon

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