The interaction of radiation defects and pd-related centers in silicon

Zhou Jie; Ruan Shengvang; Hao Hong; G. E. Weikun; J. I. Xiujiang; L. I. Shuying

doi:10.1088/0256-307X/3/1/002

The interaction of radiation defects and pd-related centers in silicon

Zhou Jie
, Ruan Shengvang
, Hao Hong
, G. E. Weikun
, J. I. Xiujiang
, L. I. Shuying

Research output: Contribution to journal › Letter › peer-review

7 Citations (Scopus)

Abstract

The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.

Original language	English
Pages (from-to)	5-8
Number of pages	4
Journal	Chinese Physics Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1088/0256-307X/3/1/002
Publication status	Published - Jan 1986
Externally published	Yes

Access to Document

10.1088/0256-307X/3/1/002

Cite this

@article{7e5c8915bff643d783f81e61056d4281,

title = "The interaction of radiation defects and pd-related centers in silicon",

abstract = "The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.",

author = "Zhou Jie and Ruan Shengvang and Hao Hong and Weikun, \{G. E.\} and Xiujiang, \{J. I.\} and Shuying, \{L. I.\}",

year = "1986",

month = jan,

doi = "10.1088/0256-307X/3/1/002",

language = "English",

volume = "3",

pages = "5--8",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "1",

}

TY - JOUR

T1 - The interaction of radiation defects and pd-related centers in silicon

AU - Jie, Zhou

AU - Shengvang, Ruan

AU - Hong, Hao

AU - Weikun, G. E.

AU - Xiujiang, J. I.

AU - Shuying, L. I.

PY - 1986/1

Y1 - 1986/1

N2 - The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.

AB - The defeats, whose structures are well known (for example, the complex of oxygen and vacancy-A center), were introduced in the p+n junction samples with diffused Pd by irradiation of electrons, and their interaction was - promoted by annealing. The existanae of the energy level related to Pd in Si can lower the annealing temperature of A centers, but does not affect its generating rate. The level related to Pd is the complex of the interstitial Pd and vacancy.

UR - https://www.scopus.com/pages/publications/0002072596

U2 - 10.1088/0256-307X/3/1/002

DO - 10.1088/0256-307X/3/1/002

M3 - Letter

AN - SCOPUS:0002072596

SN - 0256-307X

VL - 3

SP - 5

EP - 8

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 1

ER -

The interaction of radiation defects and pd-related centers in silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this