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The next generation BSIM for sub-100nm mixed-signal circuit simulation

  • Xuemei Xi*
  • , Jin He
  • , Mohan Dunga
  • , Chung Hsun Lin
  • , Babak Heydari
  • , Hui Wan
  • , Mansun Chan
  • , Ali M. Niknejad
  • , Chenming Hu
  • *Corresponding author for this work

Research output: Contribution to journalConference article published in journalpeer-review

Abstract

This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

Original languageEnglish
Pages (from-to)13-16
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
Publication statusPublished - 2004
Externally publishedYes
EventProceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, United States
Duration: 3 Oct 20046 Oct 2004

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