The next generation BSIM for sub-100nm mixed-signal circuit simulation

Xuemei Xi; Jin He; Mohan Dunga; Chung Hsun Lin; Babak Heydari; Hui Wan; Mansun Chan; Ali M. Niknejad; Chenming Hu

The next generation BSIM for sub-100nm mixed-signal circuit simulation

Xuemei Xi^*, Jin He, Mohan Dunga, Chung Hsun Lin, Babak Heydari, Hui Wan, Mansun Chan, Ali M. Niknejad, Chenming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article published in journal › peer-review

2 Citations (Scopus)

Abstract

This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

Original language	English
Pages (from-to)	13-16
Number of pages	4
Journal	Proceedings of the Custom Integrated Circuits Conference
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, United States Duration: 3 Oct 2004 → 6 Oct 2004

Cite this

@article{c54e281881b44e52bc5a8b187149c513,

title = "The next generation BSIM for sub-100nm mixed-signal circuit simulation",

abstract = "This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.",

author = "Xuemei Xi and Jin He and Mohan Dunga and Lin, \{Chung Hsun\} and Babak Heydari and Hui Wan and Mansun Chan and Niknejad, \{Ali M.\} and Chenming Hu",

year = "2004",

language = "English",

pages = "13--16",

journal = "Proceedings of the Custom Integrated Circuits Conference",

issn = "0886-5930",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC ; Conference date: 03-10-2004 Through 06-10-2004",

}

TY - JOUR

T1 - The next generation BSIM for sub-100nm mixed-signal circuit simulation

AU - Xi, Xuemei

AU - He, Jin

AU - Dunga, Mohan

AU - Lin, Chung Hsun

AU - Heydari, Babak

AU - Wan, Hui

AU - Chan, Mansun

AU - Niknejad, Ali M.

AU - Hu, Chenming

PY - 2004

Y1 - 2004

N2 - This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

AB - This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

UR - https://www.scopus.com/pages/publications/17044430931

M3 - Conference article published in journal

AN - SCOPUS:17044430931

SN - 0886-5930

SP - 13

EP - 16

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

T2 - Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC

Y2 - 3 October 2004 through 6 October 2004

ER -

The next generation BSIM for sub-100nm mixed-signal circuit simulation

Abstract

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