TY - JOUR
T1 - The Origin of Electrically Active Centers in a Near‐Coincidence Σ9 Grain Boundary in Germanium
AU - Wang, N.
AU - Wilbrandt, P. J.
AU - Haasen, P.
PY - 1991/8/1
Y1 - 1991/8/1
N2 - The electronic defect states of a near‐coincidence Σ9 tilt grain boundary (GB) in germanium is characterized by means of deep level transient spectroscopy (DLTS). An energy level at (0.52 ± 0.02) eV below the conduction band of Ge is found for 1 × 1016 m−2 defect states. The structure of this boundary, which contains GB dislocations (b = 1/9 [221] a), is further studied by high resolution electron microscopy (HREM). The dislocations are found to have many jogs (3 × 1016 m−2) which create dangling bonds. This finding may represent experimental evidence that the dangling bonds are at the origin of the electrical activity of the GB in Σ9 bicrystal.
AB - The electronic defect states of a near‐coincidence Σ9 tilt grain boundary (GB) in germanium is characterized by means of deep level transient spectroscopy (DLTS). An energy level at (0.52 ± 0.02) eV below the conduction band of Ge is found for 1 × 1016 m−2 defect states. The structure of this boundary, which contains GB dislocations (b = 1/9 [221] a), is further studied by high resolution electron microscopy (HREM). The dislocations are found to have many jogs (3 × 1016 m−2) which create dangling bonds. This finding may represent experimental evidence that the dangling bonds are at the origin of the electrical activity of the GB in Σ9 bicrystal.
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1991GJ27800003
UR - https://openalex.org/W1989386323
UR - https://www.scopus.com/pages/publications/84987111464
U2 - 10.1002/pssb.2221660204
DO - 10.1002/pssb.2221660204
M3 - Journal Article
SN - 0370-1972
VL - 166
SP - 347
EP - 358
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
IS - 2
ER -