The physics and technology of bridged-grain polycrystalline silicon thin-film transistor

Man Wong; Hoi Sing Kwok; Wei Zhou; Rongsheng Chen; Meng Zhang; Shuming Chen; Thomas Chow

The physics and technology of bridged-grain polycrystalline silicon thin-film transistor

Man Wong^*, Hoi Sing Kwok, Wei Zhou, Rongsheng Chen, Meng Zhang, Shuming Chen, Thomas Chow

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

Bridged-grain refers to a device structure incorporating multiple doped "pockets" in the channel of a thin-film transistor. The short-channel and the multi-junction effects are beneficially exploited to increase the on-current and to reduce the leakage current. The physics of the device operation is studied and the benefits are experimentally demonstrated.

Original language	English
Title of host publication	20th International Display Workshops 2013, IDW 2013
Publisher	International Display Workshops
Pages	250-253
Number of pages	4
ISBN (Electronic)	9781510827783
Publication status	Published - 2013
Event	20th International Display Workshops 2013, IDW 2013 - Sapporo, Japan Duration: 3 Dec 2013 → 6 Dec 2013

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	20th International Display Workshops 2013, IDW 2013
Country/Territory	Japan
City	Sapporo
Period	3/12/13 → 6/12/13

Bibliographical note

Publisher Copyright:
© 2013 ITE and SID.

Keywords

Bridged-grain
Multi-junction effects
Short channel effects

Cite this

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title = "The physics and technology of bridged-grain polycrystalline silicon thin-film transistor",

abstract = "Bridged-grain refers to a device structure incorporating multiple doped {"}pockets{"} in the channel of a thin-film transistor. The short-channel and the multi-junction effects are beneficially exploited to increase the on-current and to reduce the leakage current. The physics of the device operation is studied and the benefits are experimentally demonstrated.",

keywords = "Bridged-grain, Multi-junction effects, Short channel effects",

author = "Man Wong and Kwok, \{Hoi Sing\} and Wei Zhou and Rongsheng Chen and Meng Zhang and Shuming Chen and Thomas Chow",

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year = "2013",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

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Wong, M, Kwok, HS, Zhou, W, Chen, R, Zhang, M, Chen, S & Chow, T 2013, The physics and technology of bridged-grain polycrystalline silicon thin-film transistor. in 20th International Display Workshops 2013, IDW 2013. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 250-253, 20th International Display Workshops 2013, IDW 2013, Sapporo, Japan, 3/12/13.

The physics and technology of bridged-grain polycrystalline silicon thin-film transistor. / Wong, Man; Kwok, Hoi Sing; Zhou, Wei et al.
20th International Display Workshops 2013, IDW 2013. International Display Workshops, 2013. p. 250-253 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - The physics and technology of bridged-grain polycrystalline silicon thin-film transistor

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AU - Kwok, Hoi Sing

AU - Zhou, Wei

AU - Chen, Rongsheng

AU - Zhang, Meng

AU - Chen, Shuming

AU - Chow, Thomas

PY - 2013

Y1 - 2013

N2 - Bridged-grain refers to a device structure incorporating multiple doped "pockets" in the channel of a thin-film transistor. The short-channel and the multi-junction effects are beneficially exploited to increase the on-current and to reduce the leakage current. The physics of the device operation is studied and the benefits are experimentally demonstrated.

AB - Bridged-grain refers to a device structure incorporating multiple doped "pockets" in the channel of a thin-film transistor. The short-channel and the multi-junction effects are beneficially exploited to increase the on-current and to reduce the leakage current. The physics of the device operation is studied and the benefits are experimentally demonstrated.

KW - Bridged-grain

KW - Multi-junction effects

KW - Short channel effects

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M3 - Conference Paper published in a book

AN - SCOPUS:85026221653

T3 - Proceedings of the International Display Workshops

SP - 250

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BT - 20th International Display Workshops 2013, IDW 2013

PB - International Display Workshops

T2 - 20th International Display Workshops 2013, IDW 2013

Y2 - 3 December 2013 through 6 December 2013

ER -

The physics and technology of bridged-grain polycrystalline silicon thin-film transistor

Abstract

Publication series

Conference

Bibliographical note

Keywords

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Cite this