The Reduction of Backgating in GaAs MESFET's by Impact Ionization

Peter George; Kelvin Hui; Ping K. Ko; Chenming Hu

doi:10.1109/55.62987

The Reduction of Backgating in GaAs MESFET's by Impact Ionization

Peter George, Kelvin Hui, Ping K. Ko, Chenming Hu

Research output: Contribution to journal › Journal Article › peer-review

9 Citations (Scopus)

Abstract

The reduction of drain current due to reverse substrate bias in GaAs MESFET's fabricated on EL2-compensated substrates is recovered on the application of sufficient drain bias. This recovery is shown to be due to the compensation of the negative space charge at the channel-substrate interface by holes generated by impact ionization in the MESFET channel. Illumination raises the value of drain bias needed for current recovery due to the requirement of additional hole flux to offset the effects of optically generated electrons on EL2 occupancy. Simulation results show that the channel current becomes independent of substrate bias when the bias value is sufficient to completely delete the p-type surface layer.

Original language	English
Pages (from-to)	434-436
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	10
DOIs	https://doi.org/10.1109/55.62987
Publication status	Published - Oct 1990
Externally published	Yes

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10.1109/55.62987

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@article{a72ec4b18b1a49b9abf32e6478b588ff,

title = "The Reduction of Backgating in GaAs MESFET's by Impact Ionization",

abstract = "The reduction of drain current due to reverse substrate bias in GaAs MESFET's fabricated on EL2-compensated substrates is recovered on the application of sufficient drain bias. This recovery is shown to be due to the compensation of the negative space charge at the channel-substrate interface by holes generated by impact ionization in the MESFET channel. Illumination raises the value of drain bias needed for current recovery due to the requirement of additional hole flux to offset the effects of optically generated electrons on EL2 occupancy. Simulation results show that the channel current becomes independent of substrate bias when the bias value is sufficient to completely delete the p-type surface layer.",

author = "Peter George and Kelvin Hui and Ko, \{Ping K.\} and Chenming Hu",

year = "1990",

month = oct,

doi = "10.1109/55.62987",

language = "English",

volume = "11",

pages = "434--436",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - The Reduction of Backgating in GaAs MESFET's by Impact Ionization

AU - George, Peter

AU - Hui, Kelvin

AU - Ko, Ping K.

AU - Hu, Chenming

PY - 1990/10

Y1 - 1990/10

N2 - The reduction of drain current due to reverse substrate bias in GaAs MESFET's fabricated on EL2-compensated substrates is recovered on the application of sufficient drain bias. This recovery is shown to be due to the compensation of the negative space charge at the channel-substrate interface by holes generated by impact ionization in the MESFET channel. Illumination raises the value of drain bias needed for current recovery due to the requirement of additional hole flux to offset the effects of optically generated electrons on EL2 occupancy. Simulation results show that the channel current becomes independent of substrate bias when the bias value is sufficient to completely delete the p-type surface layer.

AB - The reduction of drain current due to reverse substrate bias in GaAs MESFET's fabricated on EL2-compensated substrates is recovered on the application of sufficient drain bias. This recovery is shown to be due to the compensation of the negative space charge at the channel-substrate interface by holes generated by impact ionization in the MESFET channel. Illumination raises the value of drain bias needed for current recovery due to the requirement of additional hole flux to offset the effects of optically generated electrons on EL2 occupancy. Simulation results show that the channel current becomes independent of substrate bias when the bias value is sufficient to completely delete the p-type surface layer.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:A1990DZ86900004

UR - https://www.scopus.com/pages/publications/0025507289

U2 - 10.1109/55.62987

DO - 10.1109/55.62987

M3 - Journal Article

AN - SCOPUS:0025507289

SN - 0741-3106

VL - 11

SP - 434

EP - 436

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

The Reduction of Backgating in GaAs MESFET's by Impact Ionization

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