TY - GEN
T1 - The role of H-plasma in aluminum induced crystallization of amorphous silicon
AU - Luo, Chong
AU - Li, Juan
AU - Li, He
AU - Meng, Zhiguo
AU - Huang, Qian
AU - Xu, Shengzhi
AU - Kwok, Hoi Sing
AU - Xiong, Shaozhen
PY - 2012
Y1 - 2012
N2 - A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm 2/V•s to 42.5 cm 2/V•s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.
AB - A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm 2/V•s to 42.5 cm 2/V•s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.
UR - https://openalex.org/W2331882539
UR - https://www.scopus.com/pages/publications/84455211086
U2 - 10.1557/opl.2011.1249
DO - 10.1557/opl.2011.1249
M3 - Conference Paper published in a book
SN - 9781605112985
T3 - Materials Research Society Symposium Proceedings
SP - 191
EP - 196
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -
