The role of H-plasma in aluminum induced crystallization of amorphous silicon

Chong Luo; Juan Li; He Li; Zhiguo Meng; Qian Huang; Shengzhi Xu; Hoi Sing Kwok; Shaozhen Xiong

doi:10.1557/opl.2011.1249

The role of H-plasma in aluminum induced crystallization of amorphous silicon

Chong Luo
, Juan Li
, He Li
, Zhiguo Meng
, Qian Huang
, Shengzhi Xu
, Hoi Sing Kwok
, Shaozhen Xiong^*

^*Corresponding author for this work

Department of Electronic and Computer Engineering

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm ²/V•s to 42.5 cm ²/V•s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011
Pages	191-196
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.1249
Publication status	Published - 2012
Event	2011 MRS Spring Meeting - San Francisco, CA, United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1321
ISSN (Print)	0272-9172

Conference

Conference	2011 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	25/04/11 → 29/04/11

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10.1557/opl.2011.1249

Cite this

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title = "The role of H-plasma in aluminum induced crystallization of amorphous silicon",

abstract = "A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm 2/V•s to 42.5 cm 2/V•s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.",

author = "Chong Luo and Juan Li and He Li and Zhiguo Meng and Qian Huang and Shengzhi Xu and Kwok, \{Hoi Sing\} and Shaozhen Xiong",

year = "2012",

doi = "10.1557/opl.2011.1249",

language = "English",

isbn = "9781605112985",

series = "Materials Research Society Symposium Proceedings",

pages = "191--196",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011",

note = "2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",

}

Luo, C, Li, J, Li, H, Meng, Z, Huang, Q, Xu, S, Kwok, HS & Xiong, S 2012, The role of H-plasma in aluminum induced crystallization of amorphous silicon. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. Materials Research Society Symposium Proceedings, vol. 1321, pp. 191-196, 2011 MRS Spring Meeting, San Francisco, CA, United States, 25/04/11. https://doi.org/10.1557/opl.2011.1249

The role of H-plasma in aluminum induced crystallization of amorphous silicon. / Luo, Chong; Li, Juan; Li, He et al.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011. 2012. p. 191-196 (Materials Research Society Symposium Proceedings; Vol. 1321).

Research output: Chapter in Book/Conference Proceeding/Report › Conference Paper published in a book › peer-review

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T1 - The role of H-plasma in aluminum induced crystallization of amorphous silicon

AU - Luo, Chong

AU - Li, Juan

AU - Li, He

AU - Meng, Zhiguo

AU - Huang, Qian

AU - Xu, Shengzhi

AU - Kwok, Hoi Sing

AU - Xiong, Shaozhen

PY - 2012

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N2 - A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm 2/V•s to 42.5 cm 2/V•s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

AB - A technique to improve and accelerate aluminum induced crystallization (AIC) by hydrogen plasma is proposed in this paper. Raman spectroscopy and Secondary Ion Mass Spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 hours to 4 hours and increases the Hall mobility from 22.1 cm 2/V•s to 42.5 cm 2/V•s. The possible mechanism of AIC assisted by hydrogen radicals will also be discussed.

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U2 - 10.1557/opl.2011.1249

DO - 10.1557/opl.2011.1249

M3 - Conference Paper published in a book

SN - 9781605112985

T3 - Materials Research Society Symposium Proceedings

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EP - 196

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011

T2 - 2011 MRS Spring Meeting

Y2 - 25 April 2011 through 29 April 2011

ER -

The role of H-plasma in aluminum induced crystallization of amorphous silicon

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